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1SS193 PDF预览

1SS193

更新时间: 2024-11-02 14:55:11
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1635K
描述
SOT-23

1SS193 技术参数

生命周期:Contact Manufacturer包装说明:PLASTIC PACKAGE-3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.14
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.15 W
最大重复峰值反向电压:80 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

1SS193 数据手册

 浏览型号1SS193的Datasheet PDF文件第2页浏览型号1SS193的Datasheet PDF文件第3页浏览型号1SS193的Datasheet PDF文件第4页 
GSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Diodes  
SOT-23  
1SS193  
Switching Diode  
FEATURES  
y
y
Low forward voltage  
Fast reverse recovery time  
1
MARKING: F3  
3
2
F 3  
F3 = Device code  
Solid dot = Green molding compound device.  
Maximum Ratings @Ta=25  
Parameter  
Symbol  
Limit  
Unit  
Non-Repetitive Peak Reverse Voltage  
DC Blocking Voltage  
VRM  
VR  
V
V
85  
80  
Forward Continuous Current  
Average Rectified Output Current  
IFM  
mA  
mA  
A
300  
100  
2.0  
IO  
IFSM  
PD  
Non-Repetitive Peak  
Forward Surge Current @t=8.3ms  
Power Dissipation  
mW  
150  
833  
Thermal Resistance from Junction to Ambient  
RθJA  
/W  
Operation Junction and Storage Temperature Range  
-55~+150  
TJ,TSTG  
Electrical Characteristics @Ta=25  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
V
Conditions  
V
(BR)  
Reverse breakdown voltage  
IR=100μA  
80  
VF1  
0.60  
V
IF=1mA  
Forward voltage  
Reverse current  
VF2  
VF3  
IR1  
0.72  
0.90  
V
V
IF=10mA  
IF=100mA  
VR=30V  
1.2  
0.1  
uA  
0.5  
3.0  
IR2  
CT  
trr  
uA  
pF  
ns  
VR=80V  
Capacitance between terminals  
Reverse recovery time  
0.9  
1.6  
VR=0,f=1MHz  
4.0  
IF=IR=10mA,Irr=0.1×IR  
www.jscj-elec.com  
1
Rev. - 2.1  

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