5秒后页面跳转
1N5828R PDF预览

1N5828R

更新时间: 2024-02-25 04:06:56
品牌 Logo 应用领域
TRSYS 整流二极管肖特基二极管
页数 文件大小 规格书
2页 119K
描述
SCHOTTKY DIODES STUD TYPE 15 A

1N5828R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-MUPM-D1Reach Compliance Code:unknown
风险等级:5.68应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.87 VJEDEC-95代码:DO-4
JESD-30 代码:O-MUPM-D1最大非重复峰值正向电流:600 A
元件数量:1相数:1
端子数量:1最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大反向电流:2000 µA表面贴装:NO
技术:SCHOTTKY端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5828R 数据手册

 浏览型号1N5828R的Datasheet PDF文件第2页 
Transys  
1N5826(R)  
THRU  
Electronics  
L
I M I T E D  
1N5828(R)  
SCHOTTKY DIODES STUD TYPE 15 A  
Features  
15Amp Rectifier  
20-40 Volts  
High Surge Capability  
Types up  
to  
40V  
V
RRM  
DO-5  
Maximum Ratings  
B
Operating Temperature: -65 C to +150  
N
Storage Temperature: -65 C to +175  
M
C
J
Maximum  
Maximum DC  
Blocking  
Recurrent  
Maximum  
Part Number  
Peak Reverse RMS Voltage  
Voltage  
Voltage  
K
1N5826(R)  
1N5827(R)  
1N5828(R)  
20V  
30V  
40V  
14V  
21V  
28V  
20V  
30V  
40V  
D
P
G
F
E
A
Notes:  
1.Standard Polarity:Stud is Cathode  
2.Reverse Polarity:Stud is Anode  
Electrical Characteristics @ 25 Unless Otherwise Specified  
Average Forward  
DIMENSIONS  
T =100  
C
IF(AV)  
15A  
Current  
INCH  
ES  
MM  
Peak Forward Surge  
DIM  
A
MIN  
MAX  
MIN  
Standard  
17.19  
-----  
MAX  
Polarity  
17.44  
20.16  
25.91  
11. 50  
5.08  
NOTE  
IFSM  
,
500A  
8.3ms  
sine  
half  
Current  
1/4 -28Threads  
.687  
B
.669  
-----  
-----  
.422  
.115  
-----  
0.44V  
0.47V  
0.50V  
(1N5826)  
(1N5827)  
(1N5828)  
NOTE (1)  
Maximum  
Instantaneous  
C
D
E
.794  
VF  
20  
1.0  
-----  
I
=15 A  
T
j
;
= 25  
Forward Voltage  
FM  
.453  
.200  
.460  
10.72  
2.93  
-----  
F
Maximum  
mA  
10  
G
H
J
11.68  
-----  
Instantaneous  
Reverse Current At  
Rated DC Blocking  
T =  
J
25  
IR  
-----  
.
-----  
.
-----  
mA  
250  
T =  
J
125  
-----  
.156  
-----  
-----  
.140  
.375  
-----  
-----  
9.52  
NOTE (1)  
Voltage  
K
3.96  
-----  
-----  
M
N
P
.667  
.080  
.175  
16.94  
2.03  
4.45  
Maximum Thermal  
Resistance,Junction  
To Case  
-----  
C/W  
3.56  
1.8  
R jc  
NOTE :  
(1)  
usec,  
Pulse Test: Pulse Width 300  
Duty Cycle  
<
2%  

与1N5828R相关器件

型号 品牌 获取价格 描述 数据表
1N5829 MICROSEMI

获取价格

25 Amp Schottky Rectifier
1N5829 TRSYS

获取价格

SCHOTTKY DIODES STUD TYPE 25 A
1N5829 NJSEMI

获取价格

SCHOTTKY BARRIER RECTIFIERS
1N5829 NAINA

获取价格

Schottky Power Diode, 25A
1N5829 MCC

获取价格

25 Amp Schottky Barrier Rectifier 20 to 35 Volts
1N5829R TRSYS

获取价格

SCHOTTKY DIODES STUD TYPE 25 A
1N5829R NAINA

获取价格

Schottky Power Diode, 25A
1N582X STMICROELECTRONICS

获取价格

LOW DROP POWER SCHOTTKY RECTIFIER
1N582XLA CYSTEKEC

获取价格

3.0Amp. Axial Leaded Schottky Barrier Diodes
1N582XRL STMICROELECTRONICS

获取价格

LOW DROP POWER SCHOTTKY RECTIFIER