Datasheet > 1N5832

1N5832

更新时间： 2024-01-04 17:48:01

品牌	Logo	应用领域
NAINA		二极管瞄准线功效
页数	文件大小	规格书
1页	139K
描述
SCHOTTKY RECTIFIER

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技术参数
数据手册

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1N5832 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.68
应用：	GENERAL PURPOSE	外壳连接：	ANODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.98 V
JEDEC-95代码：	DO-5	JESD-30 代码：	O-MUPM-D1
最大非重复峰值正向电流：	800 A	元件数量：	1
相数：	1	端子数量：	1
最高工作温度：	125 °C	最低工作温度：	-65 °C
最大输出电流：	40 A	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	POST/STUD MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大重复峰值反向电压：	20 V
最大反向电流：	20000 µA	表面贴装：	NO
技术：	SCHOTTKY	端子形式：	SOLDER LUG
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

1N5832 数据手册

IN 5832

SCHOTTKY RECTIFIER

NAINA

40AMPERE

20 VOLTS

Designer‘s Data Sheet

Switchmode Power Rectifirs .

employing the Schottky Barrier principle in a large area metal-to-silicon power

diode.State-of-the-art geometry features epitaxial construction with oside

passivation and metal overlap contact. ideally suited for use as rectifiers in

low-voltage, high-frequency inverters, free whelling diodes, and polarity

protection diodes.

•

Extremely Low V_F

Low Stored Charge, Majority

Carrier Conduction

•

Low Power Loss/High

Efficiency

POLARITY

Ø 4.0

•

High Surge Capacity

Mechnical Characteristics :

•

Case Welded steel, hermetically seated

Finish : All External Surtaces Corrosion Resistant and Terminal .Lead is

Reverse

Normal

17A/F

M8 x1.25

11.5

Readily Solderable

Solder Heat : The excellent heat transfer property of the heavy duty copper

anode terminal which transmits heat away from the die requires that caution be

used when attaching wires.

•

Stud Torque: 15 Ib-in max

MAXIMUM RATINGS

Ratings

Symbol

VRRM

VRWM

VRSM

V_RSM

I_O

1N5832

UNIT

Volts

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

PC Blooking Voltage

Nonrepetitive Peak Reverse Voltage

Average Rectified Forward Current

V_R(equiv)≤0.2 V_R(dc)..T_C=85⁰C

Ambient Temperature Rated V_R(dc).P_F(AV)= 0, R_θJA=3.5⁰C/W

Nonrepetitive Peak Surge Current

(surge applied at rated load conditions, halfwave,

single phase, 50 Hz)

Volts

Amps

100

800

IFSM

Amps

for one cycle

Operating and Storage Junction Temperature Range

(Reverse voltage applied)

T_J,T_stg

T_J(pk)

-65 to + 125

150

Peak Operating Junction Temperature (Forward

Current Applied)

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

1.0

Unit

⁰C/W

Thermal Resistance, Junction to case

θJC

ELECTRICAL CHARACTERISTICS (T_C=25⁰Cunless otherwise noted)

(1)

Maximum Instantaneous Forward Voltage (IF=10 Amps)

0.36

0.52

0.980

Volts

( I^F=40 Amps))

(IF=125 Amps)

Maximum Instantaneous Reverse Current @

(1)

Rated dc Voltage (1) (T_C=100 C

150

Data (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle=2%,

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