Datasheet > 1N5832_13

1N5832_13

更新时间： 2024-02-13 10:27:56

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
2页	118K
描述
Schottky Power Diode, 40A

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中文翻译

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数据手册

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1N5832_13 数据手册

1N5832 thru

1N5834R

Naina Semiconductor Ltd.

Schottky Power Diode, 40A

Features

•

Fast Switching

Low forward voltage drop

High surge capability

High efficiency, low power loss

Normal and Reverse polarity

DO-203AB (DO-5)

Maximum Ratings (T_J= 25^oC, unless otherwise noted)

Parameter

Test Conditions

Symbol 1N5832(R)

1N5833(R)

1N5834(R)

Units

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

V_RRM

V_RMS

V_DC

I_F

Continuous forward current

T_C≤ 100^oC

T_C= 25^oC

Surge non-repetitive forward

current, half-sine wave

I_FSM

V_F

800

I_F= 40 A

T_J= 25^oC

V_R= 10V, T_J= 25^oC

V_R= 10V, T_J= 125^oC

Forward voltage

Reverse current

0.52

0.55

0.58

I_R

250

Thermal & Mechanical Specifications (T_J= 25^oC, unless otherwise noted)

Parameters

Symbol 1N5832(R) 1N5833(R) 1N5834(R)

Units

^oC/W

^oC

Maximum thermal resistance, junction to case

Operating junction temperature range

Storage temperature

R_th(JC)

T_J

1.5

-65 to 150

-65 to 175

4.0

T_stg

^oC

Mounting torque (non-lubricated threads)

Approximate allowable weight

17.0

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

中文翻译

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