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1N5908 PDF预览

1N5908

更新时间: 2024-11-19 22:29:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管
页数 文件大小 规格书
6页 74K
描述
TRANSILTM

1N5908 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AB包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:9 weeks风险等级:1.34
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:221678Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Diodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name:DO-201Samacsys Released Date:2016-03-17 18:36:43
Is Samacsys:N其他特性:UL RECOGNIZED
最小击穿电压:6 V击穿电压标称值:6 V
外壳连接:ISOLATED最大钳位电压:8.5 V
配置:SINGLE最小二极管电容:9500 pF
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:5 V
最大反向电流:300 µA子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5908 数据手册

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1N5908  
SM5908  
TRANSILTM  
FEATURES  
UNIDIRECTIONAL TRANSIL DIODE  
PEAK PULSE POWER : 1500 W (10/1000µs)  
REVERSESTAND OFF VOLTAGE: 5 V  
LOW CLAMPINGFACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
The 1N5908 and SM5908 are dedicatedto the 5 V  
logiccircuitprotection(TTL andCMOStechnologies).  
Their low clamping voltage at high current level  
guarantees excellent protection for sensitive  
components.  
CB429  
SMC  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C).  
Symbol  
PPP  
Parameter  
Peakpulse power dissipation (see note1)  
Power dissipationon infinite heatsink  
Value  
Unit  
W
Tj initial = Tamb  
1500  
5
P
Tamb = 75°C  
W
IFSM  
Non repetitive surge peak forward current  
for unidirectionaltypes  
tp = 10ms  
Tj initial= Tamb  
200  
A
Tstg  
Tj  
Storage temperaturerange  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
TL  
Maximum lead temperaturefor soldering  
during10s (at 5mm from case for CB429)  
CB429  
SMC  
230  
260  
°C  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
20  
Unit  
°C/W  
°C/W  
°C/W  
Junction to leads  
Rth (j-a)  
Junction to ambient  
on printed circuit.  
CB429  
SMC  
75  
L lead = 10 mm  
75  
On recommended pad layout  
August 1999 Ed : 2A  
1/6  

1N5908 替代型号

型号 品牌 替代类型 描述 数据表
ICTE-5/4 VISHAY

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Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS

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