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1N582XLA PDF预览

1N582XLA

更新时间: 2024-11-13 06:18:51
品牌 Logo 应用领域
全宇昕 - CYSTEKEC 二极管
页数 文件大小 规格书
3页 136K
描述
3.0Amp. Axial Leaded Schottky Barrier Diodes

1N582XLA 数据手册

 浏览型号1N582XLA的Datasheet PDF文件第2页浏览型号1N582XLA的Datasheet PDF文件第3页 
Spec. No. : C330LA  
Issued Date : 2003.04.16  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/3  
3.0Amp. Axial Leaded Schottky Barrier Diodes  
1N582XLA Series  
Features  
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications  
Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0  
Low leakage current  
High surge capability  
High temperature soldering: 250°C/10 seconds at terminals  
High reliability  
Mechanical Data  
Case: DO-201AD molded plastic.  
Terminals: Axial leads, solderable per MIL-STD-202 method 208  
Polarity: Indicated by cathode band.  
Weight: 1.10 gram  
Maximum Ratings and Electrical Characteristics  
(Rating at 25°C ambient temperature unless otherwise noted. Single phase, half wave, 60Hz, resistive or  
inductive load. )  
Type  
1N5820 1N5821 1N5822  
Parameter  
Conditions  
Symbol  
Units  
min  
typ  
30  
21  
30  
max  
Repetitive peak reverse  
voltage  
VRRM  
VRMS  
VR  
20  
40  
V
V
V
Maximum RMS voltage  
Maximum DC blocking  
voltage  
14  
28  
20  
40  
Maximum instantaneous  
forward voltage  
IF=3A (Note 1)  
VF  
IO  
0.475 0.500 0.525  
V
A
A
Maximum average forward  
rectified current  
3
8.3ms single half sine wave superimposed  
on rated load(JEDEC method)  
VR=VRRM,TA=25 (Note 1)  
Peak forward surge current  
IFSM  
IR  
80  
2
20  
mA  
mA  
Maximum DC reverse  
current  
VR=VRRM,TA=125 (Note 1)  
Maximum thermal  
Junction to ambient(Note 2)  
Rth,JA  
40  
/w  
resistance  
Diode junction capacitance f=1MHz and applied 4V reverse voltage  
Storage temperature  
CJ  
Tstg  
TJ  
250  
-65~+125  
-65~+125  
pF  
Operating temperature  
Notes: 1.Pulse test, pulse width=300μsec, 2% duty cycle  
1N582XLA  
CYStek Product Specification  

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