Spec. No. : C330LA
Issued Date : 2003.04.16
Revised Date :
CYStech Electronics Corp.
Page No. : 1/3
3.0Amp. Axial Leaded Schottky Barrier Diodes
1N582XLA Series
Features
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
• Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0
• Low leakage current
• High surge capability
• High temperature soldering: 250°C/10 seconds at terminals
• High reliability
Mechanical Data
• Case: DO-201AD molded plastic.
• Terminals: Axial leads, solderable per MIL-STD-202 method 208
• Polarity: Indicated by cathode band.
• Weight: 1.10 gram
Maximum Ratings and Electrical Characteristics
(Rating at 25°C ambient temperature unless otherwise noted. Single phase, half wave, 60Hz, resistive or
inductive load. )
Type
1N5820 1N5821 1N5822
Parameter
Conditions
Symbol
Units
min
typ
30
21
30
max
Repetitive peak reverse
voltage
VRRM
VRMS
VR
20
40
V
V
V
Maximum RMS voltage
Maximum DC blocking
voltage
14
28
20
40
Maximum instantaneous
forward voltage
IF=3A (Note 1)
VF
IO
0.475 0.500 0.525
V
A
A
Maximum average forward
rectified current
3
8.3ms single half sine wave superimposed
on rated load(JEDEC method)
VR=VRRM,TA=25 (Note 1)
Peak forward surge current
IFSM
IR
80
2
20
mA
mA
℃
Maximum DC reverse
current
℃
VR=VRRM,TA=125 (Note 1)
Maximum thermal
Junction to ambient(Note 2)
Rth,JA
40
℃
/w
resistance
Diode junction capacitance f=1MHz and applied 4V reverse voltage
Storage temperature
CJ
Tstg
TJ
250
-65~+125
-65~+125
pF
℃
℃
Operating temperature
Notes: 1.Pulse test, pulse width=300μsec, 2% duty cycle
1N582XLA
CYStek Product Specification