Datasheet > 1N582XLA

1N582XLA

更新时间： 2024-01-12 04:51:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		二极管
页数	文件大小	规格书
3页	136K
描述
3.0Amp. Axial Leaded Schottky Barrier Diodes

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数据手册

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1N582XLA 数据手册

Spec. No. : C330LA

Issued Date : 2003.04.16

Revised Date :

CYStech Electronics Corp.

Page No. : 1/3

3.0Amp. Axial Leaded Schottky Barrier Diodes

1N582XLA Series

Features

• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

• Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0

• Low leakage current

• High surge capability

• High temperature soldering: 250°C/10 seconds at terminals

• High reliability

Mechanical Data

• Case: DO-201AD molded plastic.

• Terminals: Axial leads, solderable per MIL-STD-202 method 208

• Polarity: Indicated by cathode band.

• Weight: 1.10 gram

Maximum Ratings and Electrical Characteristics

(Rating at 25°C ambient temperature unless otherwise noted. Single phase, half wave, 60Hz, resistive or

inductive load. )

Type

1N5820 1N5821 1N5822

Parameter

Conditions

Symbol

Units

min

typ

max

Repetitive peak reverse

voltage

V_RRM

V_RMS

V_R

Maximum RMS voltage

Maximum DC blocking

voltage

Maximum instantaneous

forward voltage

I_F=3A (Note 1)

V_F

I_O

0.475 0.500 0.525

Maximum average forward

rectified current

8.3ms single half sine wave superimposed

on rated load(JEDEC method)

V_R=V_RRM,T_A=25 (Note 1)

Peak forward surge current

I_FSM

I_R

℃

Maximum DC reverse

current

℃

V_R=V_RRM,T_A=125 (Note 1)

Maximum thermal

Junction to ambient(Note 2)

R_th,_JA

℃

resistance

Diode junction capacitance f=1MHz and applied 4V reverse voltage

Storage temperature

C_J

Tstg

T_J

250

-65~+125

℃

Operating temperature

Notes: 1.Pulse test, pulse width=300μsec, 2% duty cycle

1N582XLA

CYStek Product Specification

12 3

中文翻译

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