Datasheet > 1N5831_1

1N5831_1

更新时间： 2022-09-13 22:28:26

品牌	Logo	应用领域
NAINA		整流二极管
页数	文件大小	规格书
2页	96K
描述
Schottky Barrier Rectifier Diode

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1N5831_1 数据手册

N5831

Naina Semicoonductor Ltd.

Schottky Barrier Rectifier Diode

Features

•

Fast Switching

Low forward voltage drop, V_F

Guard ring protection

High surge capacity

High efficiency, low power loss

Electrical Ratings (T_C= 25⁰C, unless otherwiise noted)

Parameter

Symbol Values Units

Repetitive peak reverse voltage

V_RRM

DC blocking voltage

V_DC

Non-repetitive peak reverse

voltage

V_RSM

Average rectified forward current

(T_C= 85^OC)

I_F(AV)

Non-repetitive peak surge current

(surge applied at rated load

conditions, halfwave, single phase,

60 Hz

DO-203AA (DO-4)

I_FSM

800

Maximum Ratings (T_C= 25⁰C, unless other

ise noted)

Parameter

Test Conditions

I_F= 10 A

Symbol

Values

0.38

Units

Maximum instantaneous forward voltage

V_F

I_F= 25 A

0.48

I_F= 78.5 A

0.82

T_C= 25^OC

Maximum instantaneous reverse current at rated DC voltage

I_R

T_C= 100^OC

150

Thermal & Mechanical Specifications (T_E=

Parameters

5⁰C, unless otherwise noted)

Symbol

R_th(JC)

T_J

lues

Units

Maximum thermal resistance, junction to case

Operating junction temperature range

Storage temperature

.75

⁰C/W

⁰C

-65

tto +125

T_stg

tto +125

Mounting torque (non-lubricated threads)

Approximate allowable weight

5.6

in-lb

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