Datasheet > 1N5831

1N5831

更新时间： 2024-11-13 06:26:27

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
1页	92K
描述
SCHOTTKY RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5831 数据手册

IN 5831

SCHOTTKY RECTIFIER

NAINA

25 AMPERE

40 VOLTS

Switch mode Power Rectifier.

employing the Schottky Barrier principle in a large area metal-to-silicon power

diode.State-of-the-art geometry features epitaxial construction with oside

passivation and metal overlap contact. ideally suited for use as rectifiers in low-

voltage, high-frequency inverters, free whelling diodes, and polarity protection

diodes.

•

Extremely Low V_F

Low Stored Charge, Majority

Carrier Conduction

•

Low Power Loss/High

Efficiency

High Surge Capacity

•

Mechnical Characteristics :

•

Case Welded steel, hermetically seated

Finish : All External Surtaces Corrosion Resistant and Terminal

Lead is Readily Solderable

NS NSR

Solder Heat : The excellent heat transfer property of the heavy duty copper

anode terminal which transmits heat away from the die requires that caution be

used when attaching wires.

11A/F

11.5

•

Stud Torque: 15 Ib-in max

M6 x 1.0

MAXIMUM RATINGS

Ratings

Symbol

VRRM

V^RWM

1N5831

UNIT

Volts

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

PC Blooking Voltage

Nonrepetitive Peak Reverse Voltage

Average Rectified Forward Current

VRSM

I_O

Volts

Amps

V_R(equiv)≤0.2 V_R(dc)..T_C=85 C

⁰C

Ambient Temperature Rated V_R(dc).P_F(AV)= 0, R_θJA=3.5 C/W

Nonrepetitive Peak Surge Current

(surge applied at rated load conditions, halfwave,

single phase, 60 Hz)

T_A

800

IFSM

Amps

for one cycle

Operating and Storage Junction Temperature Range

(Reverse voltage applied)

T_J,T_stg

T_J(pk)

-65 TO +125

150

Peak Operating Junction Temperature (Forward

Current Applied)

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

1.75

Unit

⁰C/W

Thermal Resistance, Junction to case

θJC

ELECTRICAL CHARACTERISTICS (T_C=25 Cunless otherwise noted)

(1)

Maximum Instantaneous Forward Voltage (I_F=10 Amps)

V_F

0.38

0.48

0.82

Volts

( I_F=25 Amps))

(I_F=78.5 Amps)

Maximum Instantaneous Reverse Current @

(1)

Rated dc Voltage (1) (T_C=100 C

150

NAINA SEMICONDUCTOR LTD., D95,SECTOR 63,NOIDA-201301(INDIA)

TEL:91-11-4205450,4273654,e-mail: kmm@nainasemi.com web:www.nainasemi.com

中文翻译

下载PDF

与1N5831相关器件

型号	品牌	获取价格	描述	数据表
1N5831_1	NAINA	获取价格	Schottky Barrier Rectifier Diode
1N5831R	TRSYS	获取价格	SCHOTTKY DIODES STUD TYPE 25 A
1N5831R	NAINA	获取价格	Schottky Power Diode, 25A
1N5832	TRSYS	获取价格	SCHOTTKY DIODES STUD TYPE 40 A
1N5832	NAINA	获取价格	SCHOTTKY RECTIFIER
1N5832	NJSEMI	获取价格	GENERAL PURPOSE SCHOTTKY RECTIFIER
1N5832	MICROSEMI	获取价格	40 Amp Schottky Rectifier
1N5832_07	MICROSEMI	获取价格	40 Amp Schottky Rectifier
1N5832_1	NAINA	获取价格	Schottky Barrier Rectifier Diode
1N5832_13	NAINA	获取价格	Schottky Power Diode, 40A