Datasheet > 1N582XRL

1N582XRL

更新时间： 2024-01-11 21:28:28

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	66K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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1N582XRL 数据手册

1N582x

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

I_F(AV)

V_RRM

T_j

3 A

40 V

150°C

0.475 V

V_F(max)

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

EXTREMELY FAST SWITCHING

LOW FORWARD VOLTAGE DROP

DO-201AD

DESCRIPTION

Axial Power Schottky rectifier suited for Switch

Mode Power Supplies and high frequency DC to

DC converters. Packaged in DO-201AD these

devices are intended for use in low voltage, high

frequency inverters, free wheeling, polarity

protection and small battery chargers.

ABSOLUTE RATINGS (limiting values)

Value

Symbol

Parameter

Unit

1N5820 1N5821 1N5822

V_RRM

I_F(RMS)

I_F(AV)

Repetitive peak reverse voltage

RMS forward current

Average forward current

T_L= 100°C

δ = 0.5

T_L= 110°C

δ = 0.5

I_FSM

Surge non repetitive forward current

Storage temperature range

tp = 10 ms

Sinusoidal

T_stg

- 65 to + 150

150

°C

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

dV/dt

10000

V/µs

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j−a)

July 1999 - Ed: 2A

1/5

12 3 4 5

中文翻译

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