5秒后页面跳转
1N5822RL PDF预览

1N5822RL

更新时间: 2024-09-26 17:33:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
5页 66K
描述
40 V、3 A轴向功率肖特基整流器

1N5822RL 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-201AD包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:0.79Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:682
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Diodes, Axial Diameter Horizontal MountingSamacsys Footprint Name:DO-201AD
Samacsys Released Date:2016-03-17 18:36:42Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:POWER
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5822RL 数据手册

 浏览型号1N5822RL的Datasheet PDF文件第2页浏览型号1N5822RL的Datasheet PDF文件第3页浏览型号1N5822RL的Datasheet PDF文件第4页浏览型号1N5822RL的Datasheet PDF文件第5页 
®
1N582x  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCTS CHARACTERISTICS  
IF(AV)  
VRRM  
Tj  
3 A  
40 V  
150°C  
0.475 V  
VF (max)  
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD VOLTAGE DROP  
DO-201AD  
DESCRIPTION  
Axial Power Schottky rectifier suited for Switch  
Mode Power Supplies and high frequency DC to  
DC converters. Packaged in DO-201AD these  
devices are intended for use in low voltage, high  
frequency inverters, free wheeling, polarity  
protection and small battery chargers.  
ABSOLUTE RATINGS (limiting values)  
Value  
Symbol  
Parameter  
Unit  
1N5820 1N5821 1N5822  
VRRM  
IF(RMS)  
IF(AV)  
20  
30  
40  
V
A
A
Repetitive peak reverse voltage  
RMS forward current  
10  
3
Average forward current  
TL = 100°C  
δ = 0.5  
3
3
A
A
TL = 110°C  
δ = 0.5  
IFSM  
80  
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms  
Sinusoidal  
Tstg  
Tj  
- 65 to + 150  
150  
°C  
°C  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
V/µs  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(ja)  
July 1999 - Ed: 2A  
1/5  

1N5822RL 替代型号

型号 品牌 替代类型 描述 数据表
1N5822 STMICROELECTRONICS

类似代替

LOW DROP POWER SCHOTTKY RECTIFIER
1N5822RLG ONSEMI

功能相似

Axial Lead Rectifiers
1N5822G ONSEMI

功能相似

Axial Lead Rectifiers

与1N5822RL相关器件

型号 品牌 获取价格 描述 数据表
1N5822RLG ONSEMI

获取价格

Axial Lead Rectifiers
1N5822S EIC

获取价格

SCHOTTKY BARRIER RECTIFIER DIODES
1N5822-T DIODES

获取价格

3.0A SCHOTTKY BARRIER RECTIFIERS
1N5822-T/B FRONTIER

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon,
1N5822-T/R FRONTIER

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon,
1N5822-T3 ONSEMI

获取价格

3.0A SCHOTTKY BARRIER DIODE
1N5822-T3 WTE

获取价格

3.0A SCHOTTKY BARRIER RECTIFIER
1N5822-T3 SENSITRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822-T3-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COM
1N5822-T3-LF ONSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COM