Datasheet > 1N5822-T3-LF

1N5822-T3-LF

更新时间： 2024-11-13 19:55:59

品牌	Logo	应用领域
WTE		功效二极管
页数	文件大小	规格书
4页	43K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

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1N5822-T3-LF 数据手册

WTE

POWER SEMICONDUCTORS

1N5820 – 1N5822

3.0A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

Mechanical Data

DO-201AD

Dim

Min

25.4

7.20

1.20

4.80

Max

Case: DO-201AD, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

—

9.50

1.30

5.30

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

1N5820

1N5821

1N5822

Unit

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current (Note 1)

@T_L= 95°C

3.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 3.0A

@I_F= 9.4A

0.475

0.850

0.50

0.90

0.525

0.950

V^FM

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

2.0

I^RM

Typical Junction Capacitance (Note 2)

C^j

250

°C/W

°C

Typical Thermal Resistance Junction to Ambient (Note 3)

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. P.C.B. mounted, 12.7mm lead length with 63.5mm²copper pad.

1N5820 – 1N5822

1 of 4

12 3 4

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与1N5822-T3-LF相关器件

型号	品牌	获取价格	描述	数据表
1N5822-TB	WTE	获取价格	3.0A SCHOTTKY BARRIER RECTIFIER
1N5822-TB	ONSEMI	获取价格	3.0A SCHOTTKY BARRIER DIODE
1N5822-TB-LF	WTE	获取价格	暂无描述
1N5822-TP	MCC	获取价格	3 Amp Schottky Barrier Rectifier 20 - 40 Volts
1N5822-TP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD,
1N5822TRLEADFREE	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD,
1N5822-TS01	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, DO-201AD
1N5822-TS01-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, DO-201AD
1N5822-TS01-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, DO-201AD
1N5822U	STMICROELECTRONICS	获取价格	Aerospace 40 V power Schottky rectifier

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