5秒后页面跳转
1N5822U02B PDF预览

1N5822U02B

更新时间: 2024-11-14 17:33:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 航空
页数 文件大小 规格书
7页 100K
描述
航空航天40 V功率肖特基整流器

1N5822U02B 技术参数

生命周期:Active零件包装代码:LCC
包装说明:R-XDSO-N2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:30 weeks
风险等级:5.32其他特性:FREE WHEELING DIODE
应用:POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:R-XDSO-N2
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:3 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

1N5822U02B 数据手册

 浏览型号1N5822U02B的Datasheet PDF文件第2页浏览型号1N5822U02B的Datasheet PDF文件第3页浏览型号1N5822U02B的Datasheet PDF文件第4页浏览型号1N5822U02B的Datasheet PDF文件第5页浏览型号1N5822U02B的Datasheet PDF文件第6页浏览型号1N5822U02B的Datasheet PDF文件第7页 
1N5822U  
Aerospace 40 V power Schottky rectifier  
Features  
K
A
Aerospace applications  
K
Surface mount hermetic package  
High thermal conductivity materials  
Very small conduction losses  
Negligible switching losses  
Extremely fast switching  
A
LCC2B  
Low forward voltage drop  
Package weight: 0.18 g  
Target radiation qualification  
– 150 krad (Si) low dose rate  
– 3 Mrad (Si) high dose rate  
Description  
This power Schottky rectifier is designed and  
packaged to comply with the ESCC5000  
specification for aerospace products. It is housed  
in a surface mount hermetically sealed LCC2B  
package whose footprint is 100% compatible with  
industry standard solutions in D5B.  
ESCC qualified  
The 1N5822U is suitable for switching mode  
power supplies and high frequency DC to DC  
converters such as low voltage high frequency  
inverter, free wheeling or polarity protection.  
(1)  
Table 1.  
Device summary  
ESCC detailed  
specification  
Order code  
Quality level  
Lead finish  
EPPL  
IF(AV)  
VRRM  
Tj(max) VF (max)  
Engineering  
model  
1N5822UB1  
-
Gold plated  
Solder dip  
-
3 A  
40 V  
150 °C 0.47 V  
1N5822U02B  
5106/020/02  
Flight part  
Y
1. Contact ST sales office for information about the specific conditions for products in die form and gold plated versions.  
September 2011  
Doc ID 16007 Rev 2  
1/7  
www.st.com  
7
 

与1N5822U02B相关器件

型号 品牌 获取价格 描述 数据表
1N5822U21 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD,
1N5822U22 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD,
1N5822U26 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD,
1N5822U27 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD,
1N5822UB1 STMICROELECTRONICS

获取价格

航空航天40 V功率肖特基整流器
1N5822US MICROSEMI

获取价格

3 AMP SCHOTTKY BARRIER RECTIFIERS
1N5822US CDI-DIODE

获取价格

3 AMP SCHOTTKY BARRIER RECTIFIERS
1N5822USE3 MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, HERMETIC SEALED, D
1N5823 MICROSEMI

获取价格

5 Amp Schottky Rectifier
1N5823 NJSEMI

获取价格

SCHOTTKY VARRIER RECTIFIERS