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1N5826R PDF预览

1N5826R

更新时间: 2024-11-13 12:26:27
品牌 Logo 应用领域
NAINA 二极管
页数 文件大小 规格书
2页 120K
描述
Schottky Power Diode, 15A

1N5826R 数据手册

 浏览型号1N5826R的Datasheet PDF文件第2页 
1N5826 thru  
1N5828R  
Naina Semiconductor Ltd.  
Schottky Power Diode, 15A  
Features  
Fast Switching  
Low forward voltage drop  
High surge capability  
High efficiency, low power loss  
Normal and Reverse polarity  
DO-203AB (DO-5)  
Maximum Ratings (TJ = 25oC, unless otherwise noted)  
Parameter  
Test Conditions  
Symbol 1N5826(R)  
1N5827(R)  
1N5828(R)  
Units  
Repetitive peak reverse voltage  
RMS reverse voltage  
DC blocking voltage  
VRRM  
VRMS  
VDC  
IF  
20  
14  
20  
15  
30  
21  
30  
15  
40  
28  
40  
15  
V
V
V
A
Continuous forward current  
TC ≤ 100oC  
TC = 25oC  
Surge non-repetitive forward  
current, half-sine wave  
IFSM  
VF  
500  
500  
500  
0.5  
A
V
IF = 15 A  
TJ = 25oC  
VR = 20V, TJ = 25oC  
VR = 20V, TJ = 125oC  
Forward voltage  
Reverse current  
0.45  
0.47  
10  
10  
10  
IR  
mA  
250  
250  
250  
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)  
Parameters  
Symbol 1N5826(R) 1N5827(R) 1N5828(R)  
Units  
oC/W  
oC  
Maximum thermal resistance, junction to case  
Operating junction temperature range  
Storage temperature  
Rth(JC)  
TJ  
1.8  
-65 to 150  
-65 to 175  
4.0  
Tstg  
F
oC  
Mounting torque (non-lubricated threads)  
Approximate allowable weight  
Nm  
g
W
17.0  
1
D-95, Sector 63, Noida – 201301, India  
Tel: 0120-4205450  
Fax: 0120-4273653  
sales@nainasemi.com  
www.nainasemi.com  

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