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1N5822US PDF预览

1N5822US

更新时间: 2024-11-12 22:52:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管肖特基二极管
页数 文件大小 规格书
2页 40K
描述
3 AMP SCHOTTKY BARRIER RECTIFIERS

1N5822US 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:HERMETIC SEALED, D5B, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.63Is Samacsys:N
其他特性:METALLURGICALLY BONDED应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5822US 数据手册

 浏览型号1N5822US的Datasheet PDF文件第2页 
• 1N5822US AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/620  
1N5820US  
thru  
1N5822US  
• 3 AMP SCHOTTKY BARRIER RECTIFIERS  
• HERMETICALLY SEALED  
• LEADLESS PACKAGE FOR SURFACE MOUNT  
• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
Average Rectified Forward Current: 3.0 AMP, T  
= +55°C  
EC  
Derating: 43 mA / °C above T  
EC  
= +55°C  
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
3.76  
0.71  
5.72  
MIN MAX  
.137 .148  
0.019 0.028  
.200 .225  
.001MIN.  
D
F
G
3.48  
0.48  
5.08  
S
0.03MIN.  
FIGURE 1  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
CDI  
TYPE  
NUMBER  
WORKING PEAK  
REVERSE  
VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
DESIGN DATA  
MAXIMUM FORWARD VOLTAGE  
CASE: D-5B, Hermetically sealed glass  
V
V
V
V
I
I
RWM  
F @ 1.0A  
VOLTS  
0.40  
F @ 3.0A  
VOLTS  
0.50  
F @ 9.4A  
VOLTS  
0.70  
R @ 25°C  
mA  
R @ 100°C  
mA  
case, PER MIL-PRF 19500/620  
VOLTS  
20  
1N5820US  
1N5821US  
1N5822US  
0.10  
0.10  
0.10  
0.10  
12.5  
12.5  
12.5  
12.5  
LEAD FINISH: Tin / Lead  
30  
0.40  
0.50  
0.70  
40  
0.40  
0.50  
0.70  
J,JX, JV & JS  
5822US  
40  
0.40  
0.50  
0.70  
THERMAL RESISTANCE: (R  
10 ÞC/W maximum at L = 0 inch  
):  
OJEC  
THERMAL IMPEDANCE: (Z  
): 3  
OJX  
ÞC/W maximum  
POLARITY: Cathode end is banded.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) of this device is approximately  
+ 4PPM / °C. The COE of the Mounting  
Surface System should be selected to  
provide a suitable match with this  
device.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
149  

1N5822US 替代型号

型号 品牌 替代类型 描述 数据表
JANS1N5822US MICROSEMI

完全替代

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, HERMETIC SEALED, D
JANTXV1N5822US MICROSEMI

功能相似

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, HERMETIC SEALED, D

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