1N5823 - 1N5825
SCHOTTKY BARRIER RECTIFIER DIODE
VOLTAGE RANGE: 20 - 40V
CURRENT: 5.0 A
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
!
High Current Capability
Low Power Loss, High Efficiency
A
B
A
!
!
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
C
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
D
Mechanical Data
DO-201AD
Min
!
!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Dim
A
Max
—
25.40
8.50
B
9.53
1.06
5.21
!
!
!
!
C
0.96
D
4.80
All Dimensions in mm
Marking: Type Number
@T =25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
A
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N5823
20
1N5824
1N5825
40
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
30
V
V
R
RMS Reverse Voltage
V
R(RMS)
14
21
28
V
A
Average Rectified Output Current @TL = 100°C
(Note 1)
I
O
5.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
150
A
Forward Voltage
@IF = 5.0A
V
FM
0.55
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
50
I
RM
mA
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
C
j
500
10
pF
°C/W
°C
R
ꢀJA
T
j
, TSTG
-65 to +150
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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