5秒后页面跳转
1N5820 PDF预览

1N5820

更新时间: 2024-09-12 22:37:39
品牌 Logo 应用领域
商朗 - LUNSURE /
页数 文件大小 规格书
2页 171K
描述
SCHOTTKY BARRIER RECTIFIER

1N5820 数据手册

 浏览型号1N5820的Datasheet PDF文件第2页 
CE  
1N5820 THRU 1N5822  
SCHOTTKY BARRIER RECTIFIER  
Reverse Voltage - 20 to 40 Volts  
Forward Current - 3.0Ampere  
CHENYI ELECTRONICS  
FEATURES  
. Plastic package has Underwriters Laboratory Flammability Classification 94V-0  
. Metal sliicon junction ,majority carriet conduction  
. Guard ring for overcoltage protection  
. Low power loss,high efficiency  
. High current capability ,Low forward voltage drop  
. High surge capability  
. For use in low voltage ,high frequency inverters,  
free wheeling , and polarilty protection applications  
. High temperature soldering guaranteed: 250 /10 seconds at terminals,  
0.375"(9.5mm)lead length,5lbs.(2.3kg)tension  
MECHANICAL DATA  
. Case: JEDEC DO-201AD molded plastic body  
. Terminals: Solder plated,solderable per MIL-STD-750,method 2026  
. Polarity: coler band denotes cathode end  
. Mounting Position: Any  
. Weight: 0.0041 ounce, 1.15 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Ratings at 25 ambient temperature unless otherwise specified,Single phase,half wave,resistive or inductive)  
load. For capacitive load,derate by 20%)  
Symbols 1N5820 1N5821 1N5822  
Units  
Volts  
Volts  
Volts  
Volts  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
24  
30  
21  
30  
36  
40  
28  
40  
48  
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
Macimum average forward rectified  
current 0.375"(9.5mm)lead length at TL=90  
Peak forward surge current 8.3ms singel half  
sine-wave superimposed on rated load  
VRSM  
I(AV)  
IFSM  
3.0  
Amp  
80.0  
Amps  
(JEDEC method) at TL=75  
)
Maximum instantaneous forward voltage at 1.0 A(Note 1)  
Maximum instantaneous forward voltage at 3.1 A(Note 1)  
VF  
VF  
0.475  
0.850  
0.500  
0.525  
0.950  
Volts  
Volts  
0.900  
1.5  
Maximum instantaneous reverse  
TA=25  
IR  
mA  
/W  
20.0  
40.0  
current at rated DC blocking voltage(Note 1)  
TA=100  
R
R
JA  
JL  
Typeical thermal resistance(Note 2)  
10.0  
-65 to +125  
Operating junction and storage temperature range  
TJ/TSTG  
Notes: 1. Pulse test: 300  
s
pulse width,1% duty cycle  
2.Thermal resistance (from junction to ambient)Vertical P.C.B. Mounted,0.500"(12.7mm)lead  
length with 2.5X2.5(63.5X63.5mm)copper pads  
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD  
Page 1 of 2  

与1N5820相关器件

型号 品牌 获取价格 描述 数据表
1N5820/100 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/100-E3 VISHAY

获取价格

DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/1-E3 VISHAY

获取价格

DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/4E VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/4-E3 VISHAY

获取价格

DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/4E-E3 VISHAY

获取价格

DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/4F VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/4F-E3 VISHAY

获取价格

DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/4G VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/4G-E3 VISHAY

获取价格

DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode