Datasheet > 1N5820/70-E3

1N5820/70-E3

更新时间： 2024-11-27 06:42:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	184K
描述
DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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1N5820/70-E3 数据手册

1N5820, 1N5821 & 1N5822

Vishay General Semiconductor

Schottky Barrier Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

3.0 A

20 V, 30 V, 40 V

80 A

V_F

0.475 V, 0.500 V, 0.525 V

125 °C

T_jmax.

DO-201AD

Features

Typical Applications

• Guardring for overvoltage protection

• Very small conduction losses

• Extremely fast switching

For use in low voltage high frequency inverters, free

wheeling, dc-to-dc converters, and polarity protection

applications

• Low forward voltage drop

Mechanical Data

Case: DO-201AD

Epoxy meets UL 94V-0 Flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

• High forward surge capability

• High frequency operation

• Solder Dip 260 °C, 40 seconds

E3 suffix for commercial grade

Polarity: Color band denotes the cathode end

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbols

V_RRM

1N5820

1N5821

1N5822

Units

*Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RMS

V_DC

3.0

Maximum DC blocking voltage

Non-repetitive peak reverse voltage

V_RSM

I_F(AV)

Maximum average forward rectified current 0.375" (9.5 mm)

lead length at T_L= 95 °C

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Storage temperature range

T_J, T_STG

- 65 to + 125

°C

Document Number 88526

13-Jul-05

www.vishay.com

12 3 4

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与1N5820/70-E3相关器件

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1N5820/73-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
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1N5820_06	ONSEMI	获取价格	SCHOTTKY BARRIER RECTIFIER
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1N5820_09	VISHAY	获取价格	Schottky Barrier Rectifier
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