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1N5820/4E-E3 PDF预览

1N5820/4E-E3

更新时间: 2024-11-26 19:02:47
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 184K
描述
DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

1N5820/4E-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:20 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

1N5820/4E-E3 数据手册

 浏览型号1N5820/4E-E3的Datasheet PDF文件第2页浏览型号1N5820/4E-E3的Datasheet PDF文件第3页浏览型号1N5820/4E-E3的Datasheet PDF文件第4页 
1N5820, 1N5821 & 1N5822  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
3.0 A  
20 V, 30 V, 40 V  
80 A  
VF  
0.475 V, 0.500 V, 0.525 V  
125 °C  
Tj max.  
DO-201AD  
Features  
Typical Applications  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
For use in low voltage high frequency inverters, free  
wheeling, dc-to-dc converters, and polarity protection  
applications  
• Low forward voltage drop  
Mechanical Data  
Case: DO-201AD  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
• High forward surge capability  
• High frequency operation  
• Solder Dip 260 °C, 40 seconds  
E3 suffix for commercial grade  
Polarity: Color band denotes the cathode end  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbols  
VRRM  
1N5820  
20  
1N5821  
30  
1N5822  
40  
Units  
V
*Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
14  
20  
24  
21  
30  
36  
3.0  
28  
40  
48  
V
V
V
A
Maximum DC blocking voltage  
Non-repetitive peak reverse voltage  
VRSM  
IF(AV)  
Maximum average forward rectified current 0.375" (9.5 mm)  
lead length at TL = 95 °C  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
80  
A
Storage temperature range  
TJ, TSTG  
- 65 to + 125  
°C  
Document Number 88526  
13-Jul-05  
www.vishay.com  
1

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