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1N5820/4E PDF预览

1N5820/4E

更新时间: 2024-11-26 21:00:43
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 342K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

1N5820/4E 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-201AD包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.37其他特性:FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:20 V表面贴装:NO
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5820/4E 数据手册

 浏览型号1N5820/4E的Datasheet PDF文件第2页浏览型号1N5820/4E的Datasheet PDF文件第3页浏览型号1N5820/4E的Datasheet PDF文件第4页 
1N5820 thru 1N5822  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Solder dip 260 °C, 40 s  
DO-201AD  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V  
80 A  
MECHANICAL DATA  
Case: DO-201AD  
VF  
0.475 V, 0.500 V, 0.525 V  
125 °C  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRMS  
1N5820  
20  
1N5821  
30  
1N5822  
40  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
V
14  
21  
28  
Maximum DC blocking voltage  
Non-repetitive peak reverse voltage  
VDC  
20  
30  
40  
VRSM  
24  
36  
48  
Maximum average forward rectified current 0.375" (9.5 mm) lead  
length at TL = 95 °C  
IF(AV)  
3.0  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
80  
A
Storage temperature range  
TJ, TSTG  
- 65 to + 125  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS SYMBOL  
1N5820  
1N5821  
0.500  
1N5822  
0.525  
UNIT  
V
Maximum instantaneous forward voltage (1) 3.0  
Maximum instantaneous forward voltage (1) 9.4  
VF  
VF  
0.475  
0.850  
0.900  
0.950  
V
Maximum average reverse current at rated  
DC blocking voltage (1)  
TA = 25 °C  
TA = 100 °C  
2.0  
20  
IR  
mA  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number: 88526  
Revision: 20-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
155  

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