Datasheet > 1N5820/64

1N5820/64

更新时间： 2024-11-27 09:35:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	342K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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1N5820/64 数据手册

1N5820 thru 1N5822

Vishay General Semiconductor

Schottky Barrier Rectifier

FEATURES

• Guardring for overvoltage protection

• Very small conduction losses

• Extremely fast switching

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

DO-201AD

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters, and polarity

protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

3.0 A

V_RRM

I_FSM

20 V, 30 V, 40 V

80 A

MECHANICAL DATA

Case: DO-201AD

V_F

0.475 V, 0.500 V, 0.525 V

125 °C

Epoxy meets UL 94V-0 flammability rating

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RMS

1N5820

1N5821

1N5822

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Non-repetitive peak reverse voltage

V_DC

V_RSM

Maximum average forward rectified current 0.375" (9.5 mm) lead

length at T_L= 95 °C

I_F(AV)

3.0

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Storage temperature range

T_J, T_STG

- 65 to + 125

°C

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL

1N5820

1N5821

0.500

1N5822

0.525

UNIT

Maximum instantaneous forward voltage ⁽¹⁾3.0

Maximum instantaneous forward voltage ⁽¹⁾9.4

V_F

0.475

0.850

0.900

0.950

Maximum average reverse current at rated

DC blocking voltage ⁽¹⁾

T_A= 25 °C

T_A= 100 °C

2.0

I_R

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

Document Number: 88526

Revision: 20-Aug-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

155

12 3 4

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与1N5820/64相关器件

型号	品牌	获取价格	描述	数据表
1N5820/64-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/66-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/68	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/70	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/70-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/73-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/74	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/D	ETC	获取价格	Axial Lead Rectifiers
1N5820_04	ONSEMI	获取价格	SCHOTTKY BARRIER RECTIFIERS
1N5820_05	EIC	获取价格	SCHOTTKY BARRIER RECTIFIER DIODES

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