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1N5820 PDF预览

1N5820

更新时间： 2024-09-12 22:37:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
6页 172K
描述
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

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1N5820 数据手册

 浏览型号1N5820的Datasheet PDF文件第2页浏览型号1N5820的Datasheet PDF文件第3页浏览型号1N5820的Datasheet PDF文件第4页浏览型号1N5820的Datasheet PDF文件第5页浏览型号1N5820的Datasheet PDF文件第6页 
Order this document  
by 1N5820/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . employing the Schottky Barrier principle in a large area metal–to–silicon  
power diode. State–of–the–art geometry features chrome barrier metal,  
epitaxial construction with oxide passivation and metal overlap contact. Ideally  
suited for use as rectifiers in low–voltage, high–frequency inverters, free  
wheeling diodes, and polarity protection diodes.  
1N5820 and 1N5822 are  
Motorola Preferred Devices  
•
•
•
Extremely Low v  
F
Low Power Loss/High Efficiency  
Low Stored Charge, Majority Carrier Conduction  
SCHOTTKY BARRIER  
RECTIFIERS  
Mechanical Characteristics:  
3.0 AMPERES  
•
•
•
Case: Epoxy, Molded  
Weight: 1.1 gram (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are  
Readily Solderable  
20, 30, 40 VOLTS  
•
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C  
Max. for 10 Seconds, 1/16″ from case  
•
•
Shipped in plastic bags, 5,000 per bag  
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the  
part number  
•
•
Polarity: Cathode indicated by Polarity Band  
Marking: 1N5820, 1N5821, 1N5822  
CASE 267–03  
PLASTIC  
MAXIMUM RATINGS  
Rating  
Symbol  
1N5820  
1N5821  
1N5822  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
20  
30  
40  
V
RRM  
RWM  
R
V
Non–Repetitive Peak Reverse Voltage  
RMS Reverse Voltage  
V
24  
14  
36  
21  
48  
28  
V
V
A
RSM  
V
R(RMS)  
3.0  
Average Rectified Forward Current (2)  
I
O
V
0.2 V  
, T = 95°C  
L
R(equiv)  
R(dc)  
(R = 28°C/W, P.C. Board Mounting, see Note 2)  
θJA  
Ambient Temperature  
Rated V ( , P  
T
A
90  
85  
80  
°C  
= 0  
R dc) F(AV)  
= 28°C/W  
R
θJA  
Non–Repetitive Peak Surge Current  
(Surge applied at rated load conditions, half wave, single phase  
I
80 (for one cycle)  
A
FSM  
60 Hz, T = 75°C)  
L
Operating and Storage Junction Temperature Range  
(Reverse Voltage applied)  
T , T  
stg  
65 to +125  
150  
°C  
°C  
J
Peak Operating Junction Temperature (Forward Current applied)  
T
J(pk)  
*THERMAL CHARACTERISTICS (Note 2)  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Ambient  
R
28  
°C/W  
θJA  
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.  
(2) Lead Temperature reference is cathode lead 1/32″ from case.  
* Indicates JEDEC Registered Data for 1N5820–22.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Rev 2  
Motorola, Inc. 1996  
123456

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1N5820 替代型号

型号 品牌 替代类型 描述 数据表
1N5820-GT3 SENSITRON

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