Datasheet > 1N5820

1N5820

更新时间： 2024-09-13 06:24:59

品牌	Logo	应用领域
DIOTECH		/
页数	文件大小	规格书
2页	633K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N5820 数据手册

1N5820 THRU 1N5822

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 3.0 Ampere

FEATURES

DO-201AD

●

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

●

Metal silicon junction,majority carrier conduction

Guardring for overvoltage protection

●

1.0 (25.4)

MIN.

Low power loss,high erriciency

High current capability,low forward voltage drop

High surge capability

For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications

High temperature soldering guaranteed:

0.220 (5.6)

0.197(5.0)

DIA.

●

0.375(9.5)

0.285(7.2)

●

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.052 (1.3)

0.048 (1.2)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.04 ounce, 1.10 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.

SYMBOLS

1N5820

1N5821

1N5822

UNITS

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V^RRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T^L=95 C

Peak forward surge current

I(AV)

3.0

IFSM

80.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

0.475

0.500

0.525

Maximum instantaneous forward voltage at 3.0A

Maximum DC reverse current

at rated DC blocking voltage

T^A=25 C

2.0

20.0

T^A=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

300.0

40.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +125

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

中文翻译

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与1N5820相关器件

型号	品牌	获取价格	描述	数据表
1N5820/100	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/100-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/1-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/4E	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/4-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/4E-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/4F	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/4F-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5820/4G	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820/4G-E3	VISHAY	获取价格	DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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