5秒后页面跳转
1N5817T/R PDF预览

1N5817T/R

更新时间: 2024-11-16 21:20:07
品牌 Logo 应用领域
飞利浦 - PHILIPS 二极管
页数 文件大小 规格书
9页 40K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),

1N5817T/R 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.81
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJESD-609代码:e0
最大非重复峰值正向电流:25 A元件数量:1
最高工作温度:125 °C最大输出电流:1 A
最大重复峰值反向电压:20 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

1N5817T/R 数据手册

 浏览型号1N5817T/R的Datasheet PDF文件第2页浏览型号1N5817T/R的Datasheet PDF文件第3页浏览型号1N5817T/R的Datasheet PDF文件第4页浏览型号1N5817T/R的Datasheet PDF文件第5页浏览型号1N5817T/R的Datasheet PDF文件第6页浏览型号1N5817T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
page  
1N5817; 1N5818; 1N5819  
Schottky barrier diodes  
1996 May 03  
Product specification  
Supersedes data of April 1992  

与1N5817T/R相关器件

型号 品牌 获取价格 描述 数据表
1N5817-T/R FRONTIER

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, Silicon
1N5817T26A FAIRCHILD

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
1N5817T26R FAIRCHILD

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
1N5817-T3 WTE

获取价格

1.0A SCHOTTKY BARRIER RECTIFIER
1N5817-T3-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLAS
1N5817T50A FAIRCHILD

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, D4, 2 PIN
1N5817T50R FAIRCHILD

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, D4, 2 PIN
1N5817-TB WTE

获取价格

1.0A SCHOTTKY BARRIER RECTIFIER
1N5817-TB-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLAS
1N5817T-G COMCHIP

获取价格

Schottky Barrier Rectifiers