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1N5817T-G PDF预览

1N5817T-G

更新时间: 2024-02-28 18:34:52
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描述
Schottky Barrier Rectifiers

1N5817T-G 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75Base Number Matches:1

1N5817T-G 数据手册

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Schottky Barrier Rectifiers  
1N5817-G Thru. 1N5819-G  
Reverse Voltage: 20 to 40 V  
Forward Current: 1.0 A  
RoHS Device  
DO-41  
Features  
-Metal-Semiconductor junction with guard ring.  
0.034(0.90)  
0.028(0.70)  
-Epitaxial construction.  
DIA.  
-Low forward voltage drop.  
1.000(25.40) Min.  
-High current capability.  
-For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications.  
0.205(5.20)  
0.165(4.20)  
0.107(2.70)  
0.080(2.00)  
DIA.  
Mechanical data  
-Case: JEDEC DO-41 molded plastic  
-Epoxy: UL 94V-0 rate flame retardant  
-Polarity: Color band denotes cathode  
-Mounting position: Any  
1.000(25.40) Min.  
Dimensions in inches and (millimeter)  
-Weight: 0.012 once, 0.34 grams  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%.  
Symbol  
1N5817-G  
1N5818-G  
1N5819-G  
Parameter  
Unit  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
20  
14  
20  
30  
21  
30  
1.0  
40  
28  
40  
V
V
V
A
V
RMS  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current @T =75°C  
A
I(AV)  
Peak forward surge current, 8.3ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
25  
A
Maximum forward voltage at 1.0A DC  
Maximum forward voltage at 3.0A DC  
V
F
0.450  
0.750  
0.550  
0.600  
0.900  
V
V
VF  
0.875  
1.0  
@T  
J
=25°C  
Maximum DC reverse current  
at rated DC blocking voltage  
IR  
mA  
@T  
J
=100°C  
10  
Typical junction capacitance (Note 1)  
Typical thermal resistance (Note 2)  
Operating temperature range  
Storage temperature range  
pF  
°C/W  
°C  
C
J
110  
R
θJA  
80  
TJ  
-55 to +150  
-55 to +150  
TSTG  
°C  
NOTES:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance junction to ambient.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 1  
QW-BG016  
Comchip Technology CO., LTD.  

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