5秒后页面跳转
1N5817TR PDF预览

1N5817TR

更新时间: 2024-11-16 07:22:43
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 89K
描述
Schottky Rectifier, 1.0 A

1N5817TR 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:LEAD FREE, DO-41, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
其他特性:HIGH RELIABILITY, FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.45 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-XALF-W2
最大非重复峰值正向电流:40 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5817TR 数据手册

 浏览型号1N5817TR的Datasheet PDF文件第2页浏览型号1N5817TR的Datasheet PDF文件第3页浏览型号1N5817TR的Datasheet PDF文件第4页浏览型号1N5817TR的Datasheet PDF文件第5页浏览型号1N5817TR的Datasheet PDF文件第6页 
1N5817  
Vishay High Power Products  
Schottky Rectifier, 1.0 A  
FEATURES  
• Low profile, axial leaded outline  
• High frequency operation  
• Very low forward voltage drop  
Cathode  
Anode  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
• Guard ring for enhanced ruggedness and long term  
reliability  
DO-204AL  
• Lead (Pb)-free plating  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
DESCRIPTION  
IF(AV)  
1.0 A  
20 V  
10 mA at 100 °C  
The 1N5817 axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
VR  
IRM  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.0  
UNITS  
Rectangular waveform  
A
V
20  
tp = 5 µs sine  
1 Apk, TJ = 25 °C  
Range  
240  
A
VF  
0.45  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
1N5817  
UNITS  
Maximum DC reverse voltage  
20  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TL = 138 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
1.0  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
240  
A
Maximum peak one cycle  
non-repetitive surge current at TJ = 25 °C  
IFSM  
40  
V
RRM applied  
Document Number: 93255  
Revision: 06-Nov-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

与1N5817TR相关器件

型号 品牌 获取价格 描述 数据表
1N5817-TR MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N5817TR-RPCU CENTRAL

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, DO-41SP, 2 PIN
1N5817U02 RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
1N5817W SEMTECH

获取价格

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
1N5817W TYSEMI

获取价格

For use in low voltage, high frequency inverters Free wheeling, and polarity protection ap
1N5817W HOTTECH

获取价格

SOD-123
1N5817W KEXIN

获取价格

Schottky Diodes
1N5817W RECTRON

获取价格

Reverse Voltage Vr : 20 V;Forward Current Io : 1.0 A;Max Surge Current : 25 A;Forward Volt
1N5817W~1N5819W FOSHAN

获取价格

SOD-123FL
1N5817WB EIC

获取价格

SCHOTTKY BARRIER DIODES