Datasheet > 1N5817WS

1N5817WS

更新时间： 2024-11-16 06:26:47

品牌	Logo	应用领域
科信 - KEXIN		二极管
页数	文件大小	规格书
2页	99K
描述
Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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1N5817WS 数据手册

SMD Type

Diodes

Schottky Barrier Diodes

1N5817WS-1N5819WS

SOD-323

Unit: mm

+0.1

1.7

-0.1

+0.05

0.85

-0.05

Features

For use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications.

+0.1

2.6

-0.1

1.0max

0.475

0.375

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

1N5817WS 1N5818WS 1N5819WS

Unit

Non-Repetitive Peak reverse voltage

VRM

Peak repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

Peak forward surge current @=8.3ms

Repetitive Peak Forward Current

Power Dissipation

IFSM

IFRM

625

K/W

250

500

Thermal Resistance Junction to Ambient

Storage temperature

-65 to 150

TSTG

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max Unit

1N5817WS

Reverse breakdown voltage

V(BR)

IR= 1mA

1N5818WS

1N5819WS

1N5817WS

1N5818WS

1N5819WS

VR=20V

VR=30V

VR=40V

IF=1A

Reverse voltage leakage current

0.45

0.75

0.55

0.875

0.6

1N5817WS

1N5818WS

1N5819WS

IF=3A

IF=1A

Forward voltage

IF=3A

IF=1A

IF=3A

0.9

Diode capacitance

VR=4V, f=1MHz

120

Marking

NO.

1N5817WS

1N5818WS

1N5819WS

Marking

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