1N5818

更新时间： 2024-11-15 22:52:19

品牌	Logo	应用领域
上华 - COMCHIP		二极管瞄准线
页数	文件大小	规格书
2页	32K
描述
Schottky Barrier Rectifier

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中文翻译

获取价格

数据手册

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1N5818 数据手册

SScchhoottttkkyy BBaarrrriieerr RReeccttiiffiieerr

CCOOMMCCHHIIPP

www.comchiptech.com

1N5817 thru 1N5819

Reverse Voltage: 20 to 40V

Forward Current: 1.0A

DO-41

Features

- Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

- Low power loss, high efficiency

1.0 (25.4)

Min.

- For use in low voltage high frequency inverters,

free wheeling, and polarity protection applications

- Guardring for overvoltage protection

0.107 (2.7)

0.080 (2.0)

Dia.

0.205 (5.2)

0.160 (4.1)

Mechanical Data

- Case: JEDEC DO-41 molded plastic body

- Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

- High temperature soldering guaranteed:

250°C/10 seconds 0.375” (9.5mm) lead length,

5lbs. (2.3kg) tension

1.0 (25.4)

Min.

0.034 (0.86)

0.028 (0.71)

Dia.

- Polarity: Color band denotes cathode end

- Mounting Position: Any

- Weight: 0.34 g

Dimensions in inches and (millimeters)

Maximum Ratings and Thermal Characteristics (T = 25°C unless otherwise noted)

Parameter

Symbol

V_RRM

V_RMS

V_DC

1N5817

1N5818

1N5819

Unit

* Maximum repetitive peak reverse voltage

Maximum RMS voltage

* Maximum DC blocking voltage

* Maximum non-repetitive peak reverse voltage

V_RSM

* Maximum average forward rectified current

0.375" (9.5mm) lead length at T_L=90°C

I_F(AV)

1.0

* Peak forward surge current, 8.3ms single

half sine-wave superimposed on rated load

(JEDEC Method) at T_L=70°C

I_FSM

Typical thermal resistance – junction-to-ambient (glass)

R_ΘJA

R_ΘJL

130

(Note 2)

– junction-to-ambient (plastic)

– junction-to-lead (plastic)

°C/W

°C

*Storage temperature range

T_J,T_STG

–65 to +125

Electrical Characteristics (T = 25°C unless otherwise noted)

Parameter

Symbol

1N5817

0.450

1N5818

0.550

1N5819

0.600

Unit

* Maximum instantaneous forward voltage at 1.0 (Note 1)

* Maximum instantaneous forward voltage at 3.1 (Note 1)

V_F

0.750

0.875

0.900

* Maximum average reverse current

at rated DC blocking voltage (Note 1)

T_A= 25°C

T_A= 100°C

1.0

I_R

Typical junction capacitance at 4.0V, 1.0MHz

C_J

110

JEDEC registered values

Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle

(2) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5” (38 x 38mm) copper pads

Page 1

MDS0309002A

中文翻译

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与1N5818相关器件

型号	品牌	获取价格	描述	数据表
1N5818.TR	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41
1N5818/1	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/4E	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/4H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/53	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/56	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/62	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/65	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/68	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/72	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

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