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1N5818/91 PDF预览

1N5818/91

更新时间: 2024-02-25 15:48:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 179K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N5818/91 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67其他特性:FREE WHEELING DIODE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
表面贴装:NO技术:SCHOTTKY
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5818/91 数据手册

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1N5817, 1N5818, 1N5819  
Vishay General Semiconductor  
Schottky Barrier Rectifiers  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
1.0 A  
20 V, 30 V, 40 V  
25 A  
VF  
0.45 V, 0.55 V, 0.60 V  
125 °C  
Tj max.  
DO-204AL (DO-41)  
Features  
Mechanical Data  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
Case: DO-204AL (DO-41)  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
• Low forward voltage drop  
• High frequency operation  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes the cathode end  
Typical Applications  
For use in low voltage high frequency inverters, free  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
VRRM  
1N5817  
20  
1N5818  
30  
1N5819  
40  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
14  
20  
24  
21  
30  
36  
1.0  
28  
40  
48  
V
V
V
A
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
VRSM  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TL = 90 °C  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
25  
A
Voltage rate of change (rated VR)  
Storage temperature range  
dv/dt  
10000  
V/µs  
°C  
TJ, TSTG  
- 65 to + 125  
Document Number 88525  
13-Jul-05  
www.vishay.com  
1

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