1N5818-BP

更新时间： 2024-01-13 05:33:16

品牌	Logo	应用领域
美微科 - MCC		二极管瞄准线
页数	文件大小	规格书
2页	84K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

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技术参数
数据手册

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1N5818-BP 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.6	Base Number Matches：	1

1N5818-BP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1N5817

THRU

1N5819

Features

Schottky Barrier Rectifier

Guard Ring Protection

Low Forward Voltage

1 Amp Schottky

Barrier Rectifier

20 to 40 Volts

Low Power Loss For High Efficiency

High Current Capability

Maximum Ratings

DO-41

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 80°C/W Junction To Ambient

Maximum

Recurrent

Peak Reverse

Voltage

Maximum DC

Blocking

Voltage

MCC

Part Number

Maximum

RMS Voltage

1N5817

1N5818

1N5819

20V

30V

40V

14V

21V

28V

20V

30V

40V

Cathode

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_A= 90°C

Peak Forward Surge

Current

I_FSM

25A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

1N5817

V_F

.45V

.55V

.60V

I_FM= 1.0A;

T_J= 25°C*

1N5818

1N5819

DIMENSIONS

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

INCHES

MAX

DIM

MIN

.166

.080

.028

1.000

MIN

4.10

2.00

.70

MAX

5.20

2.70

.90

NOTE

I_R

0.5mA T_J= 25°C

10mA T_J= 100°C

.205

.107

.034

---

25.40

---

C_j

110pF Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 300 msec, Duty cycle 2%

www.mccsemi.com

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