Schottky Barrier Rectifiers
1N5817-G Thru. 1N5819-G
Reverse Voltage: 20 to 40 V
Forward Current: 1.0 A
RoHS Device
DO-41
Features
-Metal-Semiconductor junction with guard ring.
0.034(0.90)
0.028(0.70)
-Epitaxial construction.
DIA.
-Low forward voltage drop.
1.000(25.40) Min.
-High current capability.
-For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
0.205(5.20)
0.165(4.20)
0.107(2.70)
0.080(2.00)
DIA.
Mechanical data
-Case: JEDEC DO-41 molded plastic
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode
-Mounting position: Any
1.000(25.40) Min.
Dimensions in inches and (millimeter)
-Weight: 0.012 once, 0.34 grams
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Symbol
1N5817-G
1N5818-G
1N5819-G
Parameter
Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
RRM
20
14
20
30
21
30
1.0
40
28
40
V
V
V
A
V
RMS
Maximum DC blocking voltage
V
DC
Maximum average forward rectified current @T =75°C
A
I(AV)
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
25
A
Maximum forward voltage at 1.0A DC
Maximum forward voltage at 3.0A DC
V
F
0.450
0.750
0.550
0.600
0.900
V
V
VF
0.875
1.0
@T
J
=25°C
Maximum DC reverse current
at rated DC blocking voltage
IR
mA
@T
J
=100°C
10
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating temperature range
Storage temperature range
pF
°C/W
°C
C
J
110
R
θJA
80
TJ
-55 to +150
-55 to +150
TSTG
°C
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to ambient.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-BG016
Comchip Technology CO., LTD.