1N5818

更新时间： 2024-11-15 22:52:19

品牌	Logo	应用领域
RECTRON		二极管瞄准线
页数	文件大小	规格书
2页	27K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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1N5818 数据手册

1N5817

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere

FEATURES

* Low switching noise

* Low forward voltage drop

* High current capability

* High switching capabitity

* High reliability

DO-41

* High surge capability

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: Device has UL flammability classification 94V-O

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

.034 (0.9)

DIA.

.028 (0.7)

1.0 (25.4)

MIN.

* Weight: 0.33 gram

.205 (5.2)

.166 (4.2)

.107 (2.7)

DIA.

.080 (2.0)

1.0 (25.4)

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

1N5817

1N5818

1N5819

UNITS

RRM

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RMS

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375” (9.5mm) lead length at TL

= 90^oC

1.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

Amps

Typical Thermal Resistance (Note) 1

Typical Junction Capacitance (Note 2)

Storage Operating Temperature Range

R θ J A

110

⁰C/W

⁰C

, TSTG

-65 to + 125

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

CHARACTERISTICS

Maximum Instantaneous Forward Voltage at 1.0A DC

Maximum Forward Voltage at 3.1A DC

SYMBOL

1N5817

.45

1N5818

.55

1N5819

.60

UNITS

Volts

.75

.875

1.0

.90

Volts

= 25^oC

= 100^oC

Maximum Average Reverse Current at

mAmps

Rated DC Blocking Voltage

NOTES : 1. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.

2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.

2001-6

中文翻译

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与1N5818相关器件

型号	品牌	获取价格	描述	数据表
1N5818.TR	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41
1N5818/1	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/4E	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/4H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/53	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/56	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/62	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/65	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/68	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5818/72	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2

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