1N5817W
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features:
PINNING
DESCRIPTION
Cathode
․ Schottky Barrier Chip
PIN
1
․ Guard Ring Die Construction for Transient Protection
․ Low Power Loss, High Efficiency
․ High Surge Capability
Anode
2
2
1
A0
․ High Current Capability and Low Forward Voltage Drop
․ For Use in Low Voltage, High Frequency Inverters, Free
Top View
Marking Code: "A0"
Wheeling, and Polarity Protection Application.
Simplified outline SOD-123 and symbol
Mechanical Data:
Case: SOD-123, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage at IR=1.0mA
DC Blocking Voltage
VRRM
VRWM
VR
20
20
20
14
1.0
V
V
V
V
A
RMS Reverse Voltage
VR(RMS)
IO
Average Rectified Output Current at TL=90℃
Power Dissipation
Ptot
450
25
mW
A
Non-Repetitive Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC Method)
IFSM
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
RθJA
Tj
222
℃/W
℃
-65 to +125
-65 to +150
Storage Temperature Range
TS
℃
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/11/2004