1N5817-TB

更新时间： 2024-11-15 22:38:07

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	39K
描述
1.0A SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5817-TB 数据手册

WTE

PO WER SEMICONDUCTORS

1N5817 – 1N5819

1.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

Mechanical Data

DO-41

Min

Dim

Max

Case: Molded Plastic

25.4

4.06

0.71

2.00

—

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

5.21

0.864

2.72

Weight: 0.34 grams (approx.)

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

1N5817

1N5818

1N5819

Unit

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current (Note 1)

@T_L= 90°C

1.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

@I_F= 3.0A

0.450

0.750

0.550

0.875

0.60

0.90

V^FM

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

1.0

I^RM

Typical Junction Capacitance (Note 2)

C^j

110

K/W

°C

Typical Thermal Resistance Junction to Lead (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JL

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1N5817 – 1N5819

1 of 3

12 3

中文翻译

下载PDF

与1N5817-TB相关器件

型号	品牌	获取价格	描述	数据表
1N5817-TB-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLAS
1N5817T-G	COMCHIP	获取价格	Schottky Barrier Rectifiers
1N5817-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLAS
1N5817-TP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41,
1N5817TR	VISHAY	获取价格	Schottky Rectifier, 1.0 A
1N5817-TR	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N5817TR-RPCU	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, DO-41SP, 2 PIN
1N5817U02	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
1N5817W	SEMTECH	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
1N5817W	TYSEMI	获取价格	For use in low voltage, high frequency inverters Free wheeling, and polarity protection ap