Datasheet > 1N5817S

1N5817S

更新时间： 2024-11-17 17:14:59

品牌	Logo	应用领域
星海 - CZSTARSEA		/
页数	文件大小	规格书
2页	21K
描述
A-405

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数据手册

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1N5817S 数据手册

1N5817S THRU 1N5819S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere

A-405

FEATURES

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

1.0 (25.4)

MIN.

Metal silicon junction,majority carrier conduction

Guardring for overvoltage protection

0.107 (2.7)

0.080 (2.0)

DIA.

Low power loss,high efficiency

High current capability,low forward voltage drop

High surge capability

0.205 (5.2)

0.166(4.2)

For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications

High temperature soldering guaranteed:

260 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.025 (0.65)

0.021(0.55)

DIA.

MECHANICAL DATA

Case: JEDEC A-405 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Dimensions in inches and (millimeters)

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.008 ounce, 0.23 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.

SYMBOLS

1N5817S

1N5818S

1N5819S

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TL=90 C

Peak forward surge current

I(AV)

1.0

IFSM

25.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

0.450

0.550

0.600

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

10.0

TA=100 C

Typical junction capacitance (NOTE 1)

RθJA

C/W

110.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-55 to +125

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

DN:T05G03A0

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1N5817T/R	NXP	获取价格	1A, 20V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2
1N5817T/R	PHILIPS	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),
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1N5817T26A	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
1N5817T26R	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41