1N5817A-G

更新时间： 2024-11-07 12:54:27

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描述
Schottky Barrier Rectifiers

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中文翻译

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数据手册

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1N5817A-G 数据手册

Schottky Barrier Rectifiers

1N5817-G Thru. 1N5819-G

Reverse Voltage: 20 to 40 V

Forward Current: 1.0 A

RoHS Device

DO-41

Features

-Metal-Semiconductor junction with guard ring.

0.034(0.90)

0.028(0.70)

-Epitaxial construction.

DIA.

-Low forward voltage drop.

1.000(25.40) Min.

-High current capability.

-For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications.

0.205(5.20)

0.165(4.20)

0.107(2.70)

0.080(2.00)

DIA.

Mechanical data

-Case: JEDEC DO-41 molded plastic

-Epoxy: UL 94V-0 rate flame retardant

-Polarity: Color band denotes cathode

-Mounting position: Any

1.000(25.40) Min.

Dimensions in inches and (millimeter)

-Weight: 0.012 once, 0.34 grams

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

Symbol

1N5817-G

1N5818-G

1N5819-G

Parameter

Unit

Maximum recurrent peak reverse voltage

Maximum RMS voltage

RRM

1.0

RMS

Maximum DC blocking voltage

Maximum average forward rectified current @T =75°C

I(AV)

Peak forward surge current, 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

Maximum forward voltage at 1.0A DC

Maximum forward voltage at 3.0A DC

0.450

0.750

0.550

0.600

0.900

0.875

1.0

=25°C

Maximum DC reverse current

at rated DC blocking voltage

=100°C

Typical junction capacitance (Note 1)

Typical thermal resistance (Note 2)

Operating temperature range

Storage temperature range

°C/W

°C

110

θJA

-55 to +150

TSTG

°C

NOTES:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance junction to ambient.

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-BG016

Comchip Technology CO., LTD.

12 3

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与1N5817A-G相关器件

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1N5817-B	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PALS
1N5817-B	WTE	获取价格	1.0A SCHOTTKY BARRIER RECTIFIER
1N5817-B	FRONTIER	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon
1N5817B-G	COMCHIP	获取价格	Schottky Barrier Rectifiers
1N5817BK	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
1N5817-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLAS
1N5817-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41,
1N5817-E	LRC	获取价格	Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 1.0A
1N5817-E	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
1N5817E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2