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1N5817G-TR PDF预览

1N5817G-TR

更新时间: 2024-01-21 19:34:13
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 118K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS PACKAGE-2

1N5817G-TR 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75Base Number Matches:1

1N5817G-TR 数据手册

 浏览型号1N5817G-TR的Datasheet PDF文件第2页浏览型号1N5817G-TR的Datasheet PDF文件第3页 

与1N5817G-TR相关器件

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1N5817G-TRE3 MICROSEMI Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLA

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1N5817H PANJIT SCHOTTKY BARRIER RECTIFIERS

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1N5817H01 RECTRON Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41

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1N5817H02-3 RECTRON Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41

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1N5817H03 RECTRON Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41

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1N5817H03-2 RECTRON Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41

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