是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DO-41 |
包装说明: | HERMETIC SEALED, GLASS PACKAGE-2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.09 |
其他特性: | HIGH RELIABILITY | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | DO-41 |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
最大输出电流: | 1 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 20 V | 表面贴装: | NO |
技术: | SCHOTTKY | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
1N5817RLG | ONSEMI |
功能相似 |
Axial Lead Rectifiers | |
1N5817G | ONSEMI |
功能相似 |
Axial Lead Rectifiers |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5817G-TRE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLA | |
1N5817H | PANJIT |
获取价格 |
SCHOTTKY BARRIER RECTIFIERS | |
1N5817H01 | RECTRON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41 | |
1N5817H02-3 | RECTRON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41 | |
1N5817H03 | RECTRON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41 | |
1N5817H03-2 | RECTRON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41 | |
1N5817H03-3 | RECTRON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41 | |
1N5817H03-4 | RECTRON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41 | |
1N5817H04 | RECTRON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41 | |
1N5817H06 | RECTRON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41 |