Datasheet > 1N5817FW-AH

1N5817FW-AH

更新时间： 2023-12-06 20:04:10

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	236K
描述
肖特基整流管

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5817FW-AH 数据手册

1N5817FW-AH

Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 V

Forward Current - 1 A

PINNING

DESCRIPTION

Cathode

Anode

Features

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF),

RoHS compliant

Top View

Marking Code : .A0

Simplified outline SOD-123FL and symbol

Absolute Maximum Ratings and Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For

capacitive load, derate by 20%

Symbols

V_RRM

V_RMS

Value

Units

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_DC

Maximum DC Blocking Voltage

I_F(AV)

Maximum Average Forward Rectified Current

Peak Forward Surge Current 8.3 ms Single Half Sine Wave

Superimposed on Rated Load(JEDEC methode)

I_FSM

V_F

I_R

Maximum Instantaneous Forward Voltage

0.45

0.75

at I_F= 1 A

at I_F= 3 A

T_A= 25℃

T_A= 100℃

Maximum Instantaneous Reverse Current at

Rated DC Blocking Voltage ¹⁾

0.5

Typical Junction Capacitance ²⁾

C_J

R_θJA

T_j

110

℃/W

℃

Typical Thermal Resistance, Junction to Ambient ³⁾

Operating Junction Temperature Range

Storage Temperature Range

¹⁾Pulse test: 300 µs pulse width, 1% duty cycle.

²⁾Mearsured at 1 MHz and reverse voltage of 4 V.

- 55 to + 125

- 55 to + 150

T_stg

℃

³⁾Thermal resistance junction to ambient 0.24" X 0.24"(6 X 6 mm) copper pads to each terminals.

1 / 3

Dated: 31/12/2021 Rev: 01

12 3

下载PDF

与1N5817FW-AH相关器件

型号	品牌	描述	获取价格	数据表
1N5817G	ONSEMI	Axial Lead Rectifiers	获取价格
1N5817G	MICROSEMI	1 Amp Schottky Rectifier	获取价格
1N5817G	MCC	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, GLASS, DO-41G, 2 PIN	获取价格
1N5817-G	COMCHIP	Schottky Barrier Rectifiers	获取价格
1N5817G-B	MCC	暂无描述	获取价格
1N5817G-BP	MCC	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, GLASS, DO-41G, 2 PIN	获取价格