Datasheet > 1N5817_15

1N5817_15

更新时间： 2024-11-10 01:26:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	70K
描述
Schottky Barrier Plastic Rectifier

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中文翻译

获取价格

数据手册

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1N5817_15 数据手册

1N5817, 1N5818, 1N5819

Vishay General Semiconductor

www.vishay.com

Schottky Barrier Plastic Rectifier

FEATURES

• Guardring for overvoltage protection

• Very small conduction losses

• Extremely fast switching

• Low forward voltage drop

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-204AL (DO-41)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

V_RRM

I_FSM

20 V, 30 V, 40 V

25 A

MECHANICAL DATA

Case: DO-204AL (DO-41)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_F

0.45 V, 0.55 V, 0.60 V

125 °C

T_Jmax.

Package

Diode variations

DO-204AL

Single

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

1N5817

1N5818

1N5819

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

V_DC

V_RSM

Maximum average forward rectified current

I_F(AV)

I_FSM

1.0

at 0.375" (9.5 mm) lead length at T_L= 90 °C

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 125

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

1.0

3.1

SYMBOL

1N5817

1N5818

0.550

0.875

1.0

1N5819

UNIT

(1)

Maximum instantaneous forward voltage

V_F

0.450

0.600

0.900

(1)

V_F

0.750

T_A= 25 °C

Maximum average reverse current

at rated DC blocking voltage

(1)

I_R

T_A= 100 °C

Typical junction capacitance

4.0 V, 1.0 MHz

C_J

125

110

Note

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Revision: 13-Aug-13

Document Number: 88525

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与1N5817_15相关器件

型号	品牌	获取价格	描述	数据表
1N5817_16	PINGWEI	获取价格	1.0AMP. SCHOTTKY BARRIER RECTIFIERS
1N5817_V01	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
1N5817_V02	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
1N5817-13	DIODES	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N5817143	NXP	获取价格	1A, 20V, SILICON, SIGNAL DIODE
1N5817-1A-DO-41	DGNJDZ	获取价格	1.0 AMP SCHOTTKY BARRIER RECTIFIERS
1N5817A-G	COMCHIP	获取价格	Schottky Barrier Rectifiers
1N5817-B	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PALS
1N5817-B	WTE	获取价格	1.0A SCHOTTKY BARRIER RECTIFIER
1N5817-B	FRONTIER	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon

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