Datasheet > 1N5626GP-HE3/54

1N5626GP-HE3/54

更新时间： 2024-01-22 06:05:21

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	71K
描述
DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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技术参数
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1N5626GP-HE3/54 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-201AD
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-2	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

1N5626GP-HE3/54 数据手册

1N5624GP thru 1N5627GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

DO-201AD

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application.

PRIMARY CHARACTERISTICS

I_F(AV)

3.0 A

MECHANICAL DATA

V_RRM

I_FSM

I_R

200 V to 800 V

125 A

Case: DO-201AD, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

5.0 μA

V_F

0.95 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

175 °C

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted) ⁽¹⁾

PARAMETER

SYMBOL 1N5624GP

1N5625GP

400

1N5626GP

600

1N5627GP

800

UNIT

Maximum repetitive peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_DC

200

400

600

800

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 70 °C

I_F(AV)

I_FSM

3.0

125

200

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Maximum full load reverse current, full cycle average

0.375" (9.5 mm) lead length at T_A= 70 °C

I_R(AV)

μA

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Note

(1)

JEDEC registered values

Document Number: 88524

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与1N5626GP-HE3/54相关器件

型号	品牌	获取价格	描述	数据表
1N5626GPHE3/73	VISHAY	获取价格	DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5626GP-HE3/73	VISHAY	获取价格	DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5626LEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2
1N5626-TAP	VISHAY	获取价格	DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE
1N5626TR	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,
1N5626-TR	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HALOGEN FREE AND
1N5627	EIC	获取价格	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5627	NJSEMI	获取价格	SI RECTIFIER
1N5627	VISHAY	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER
1N5627	POWEREX	获取价格	Lead Mounted Rectifier

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