Datasheet > 1N5627TR

1N5627TR

更新时间： 2023-01-03 01:29:25

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	32K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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1N5627TR 数据手册

1N5624...1N5627

Vishay Telefunken

Silicon Mesa Rectifiers

Features

Glass passivated junction

Hermetically sealed package

Controlled avalanche characteristics

Low reverse current

High surge current loading

Applications

94 9588

Rectifier, general purpose

Absolute Maximum Ratings

T = 25 C

Parameter

Test Conditions

Type

Symbol

V =

Value

200

400

600

800

100

Unit

1N5624

1N5625

1N5626

1N5627

Reverse voltage=

Repetitive peak reverse voltage

RRM

Peak forward surge current

Repetitive peak forward current

Average forward current

t =10ms, half sinewave

FSM

FRM

FAV

t =20 s, half sine wave,

T =175 C

Pulse avalanche peak power

1000

Pulse energy in avalanche mode,

non repetitive (inductive load

switch off)

=1A, T =175 C

(BR)R

i *t–rating

i *t

A *s

Junction and storage tempera-

ture range

T =T

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Test Conditions

l=10mm, T =constant

on PC board with spacing 25mm

Symbol

Value

Unit

K/W

Junction ambient

thJA

www.vishay.com

1 (4)

Document Number 86063

Rev. 2, 27-Sep-00

12 3 4

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