1N5627

更新时间： 2024-09-16 22:37:39

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
2页	55K
描述
GLASS PASSIVATED JUNCTION RECTIFIER

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中文翻译

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数据手册

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1N5627 数据手册

1N5624 THRU 1N5627

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 200 to 800 Volts Forward Current - 3.0 Amperes

CASE STYLE G3

FEATURES

♦ Glass passivated cavity-free junction

♦ High temperature metallurgically bonded

constructed

♦ Hermetically sealed package

♦ Capable of meeting

1.0 (25.4)

MIN

0.250 (6.3)

environmental

standards of

MIL-S-19500

0.170 (4.3)

DIA.

♦ Typical I less than 0.1µA

♦ 3.0 Ampere operation at T =70°C with no thermal

0.300 (7.6)

MAX.

runaway

♦ High temperature soldering guaranteed:

350°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.052 (1.32)

1.0 (25.4)

MIN

0.048 (1.22)

DIA.

MECHANICAL DATA

Case: Solid glass body

Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.04 ounce, 1.1 grams

Dimensions in inches and (millimeters)

Brazed-lead assembly is covered by Patent No. 3,930,306

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

1N5624

200

1N5625

400

1N5626

600

1N5627

800

UNITS

Volts

*Maximum repetitive peak reverse voltage

Maximum RMS voltage

140

280

420

560

*Maximum DC blocking voltage

200

400

600

800

*Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=70°C

I_(AV

3.0

Amps

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

I_FSM

125.0

*Maximum instantaneous forward voltage at 3.0A

T_A=25°C

T_A=70°C

V_F

1.0

0.95

Volts

*Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=175°C

5.0

I_R

I_R(AV)

C_J

µA

300.0

150.0

200.0

100.0

*Maximum full load reverse current, full cycle average,

0.375" (9.5mm) lead length at T_A=70°C

µA

Typical junction capacitance _{(NOTE 1)}

Typical thermal resistance _{(NOTE 2)}

40.0

R_ΘJA

R_ΘJL

20.0

10.0

°C/W

*Operating junction temperature range

*Storage temperature range

T_J

-65 to +175

-65 to +200

°C

T_STG

NOTES:

(1) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(2) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,

with both leads attached between heatsinks

*JEDEC registered values

4/98

中文翻译

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与1N5627相关器件

型号	品牌	获取价格	描述	数据表
1N5627-E3/54	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, ROHS COMPLIANT,
1N5627GP	VISHAY	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER
1N5627GP/4F-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5627GP/65-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5627GP/71	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5627GP/90-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5627GP/92-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5627GP/93-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5627GP-E3/100	VISHAY	获取价格	暂无描述
1N5627GP-E3/4	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P

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