是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | HERMETIC SEALED, GPR-3A, 2 PIN |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.21 | 其他特性: | HIGH RELIABILITY |
应用: | GENERAL PURPOSE | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | E-LALF-W2 |
JESD-609代码: | e3 | 最大非重复峰值正向电流: | 125 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 2 | 最大输出电流: | 5 A |
封装主体材料: | GLASS | 封装形状: | ELLIPTICAL |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 600 V |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | 10 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5626-TAP | VISHAY |
获取价格 |
DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE |
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1N5626TR | CENTRAL |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, |
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1N5626-TR | VISHAY |
获取价格 |
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HALOGEN FREE AND |
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1N5627 | EIC |
获取价格 |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
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1N5627 | NJSEMI |
获取价格 |
SI RECTIFIER |
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1N5627 | VISHAY |
获取价格 |
GLASS PASSIVATED JUNCTION RECTIFIER |
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1N5627 | POWEREX |
获取价格 |
Lead Mounted Rectifier |
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1N5627 | DIGITRON |
获取价格 |
Rectifier, Standard Recovery; Max Peak Repetitive Reverse Voltage: 3; Max TMS Bridge Input |
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1N5627 | CENTRAL |
获取价格 |
3A,800V Through-Hole Rectifier-General Purpose Single |
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1N5627-E3/54 | VISHAY |
获取价格 |
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, ROHS COMPLIANT, |
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