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1N5626GP-HE3/73 PDF预览

1N5626GP-HE3/73

更新时间： 2024-11-19 14:39:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 71K
描述
DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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1N5626GP-HE3/73 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DO-201AD
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-2针数：2
Reach Compliance Code：unknown风险等级：5.65
Is Samacsys：NBase Number Matches：1

1N5626GP-HE3/73 数据手册

 浏览型号1N5626GP-HE3/73的Datasheet PDF文件第2页浏览型号1N5626GP-HE3/73的Datasheet PDF文件第3页浏览型号1N5626GP-HE3/73的Datasheet PDF文件第4页 
1N5624GP thru 1N5627GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
FEATURES  
• Superectifier structure for high reliability  
application  
SUPERECTIFIER®  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
DO-201AD  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
IR  
200 V to 800 V  
125 A  
Case: DO-201AD, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
5.0 μA  
VF  
0.95 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
175 °C  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) (1)  
PARAMETER  
SYMBOL 1N5624GP  
1N5625GP  
400  
1N5626GP  
600  
1N5627GP  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VDC  
200  
200  
V
V
400  
600  
800  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 70 °C  
IF(AV)  
IFSM  
3.0  
125  
200  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
Maximum full load reverse current, full cycle average  
0.375" (9.5 mm) lead length at TA = 70 °C  
IR(AV)  
μA  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Note  
(1)  
JEDEC registered values  
Document Number: 88524  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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