1N5624GP

更新时间： 2024-11-25 22:37:39

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
页数	文件大小	规格书
2页	62K
描述
GLASS PASSIVATED JUNCTION RECTIFIER

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中文翻译

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技术参数
数据手册

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1N5624GP 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.51
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1 V
元件数量：	1	最高工作温度：	175 °C
最大输出电流：	3 A	最大重复峰值反向电压：	200 V
最大反向恢复时间：	3 µs	子类别：	Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

1N5624GP 数据手册

1N5624GP THRU 1N5627GP

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 200 to 800 Volts

Forward Current - 3.0 Amperes

DO-201AD

FEATURES

♦ Plastic package has

Underwriters Laboratory

1.0 (25.4)

MIN.

Flammability Classification 94V-0

♦ High temperature metallurgically

bonded construction

0.210 (5.3)

0.190 (4.8)

DIA.

♦ Glass passivated cavity-free junction

♦ Capable of meeting environmental standards of

MIL-S-19500

0.375 (9.5)

0.285 (7.2)

♦ 3.0 Ampere operation at T =70°C with no thermal

runaway

♦ Typical I less than 0.1µA

0.052 (1.32)

♦ High temperature soldering guaranteed:

350°C/10 seconds, 0.375" (9.5mm) lead length

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.048 (1.22)

DIA.

Dimensions in inches and (millimeters)

*Glass-plastic encapsulation technique is covered by

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic over glass body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.04 ounce, 1.12 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_DC

1N5624GP 1N5625GP

1N5626GP 1N5627GP

UNITS

Volts

* Maximum repetitive peak reverse voltage

* Maximum DC blocking voltage

200

400

600

800

* Maximum average forward rectified current

0.375" (9.5mm) lead lengths at T_A=70°C

I_(AV)

3.0

Amps

* Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

125.0

* Maximum instantaneous forward voltage at 3.0A T_A=25°C

T_A=70°C

1.0

0.95

V_F

I_R

Volts

µA

Maximum reverse current

T_A=25°C

5.0

at rated DC blocking voltage

T_A=150°C

300.0

200.0

Maximum full load reverse current, full cycle

average, 0.375" (9.5mm) lead length at T_A=70°C

I_R(AV)

200.0

3.0

µA

Typical reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

t_rr

C_J

µs

40.0

20.0

R_ΘJA

T_J, T_STG

°C/W

°C

Operating junction and storage temperature range

-65 to +175

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 V_DC

(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted

*JEDEC Values

4/98

中文翻译

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与1N5624GP相关器件

型号	品牌	获取价格	描述	数据表
1N5624GP/51-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP/58-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP/64-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP/66-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP/72	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5624GP/73-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP-E3/54	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5624GP-E3/66	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP-E3/71	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP-E3/73	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R

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