Datasheet > 1N5624GP/73-E3

1N5624GP/73-E3

更新时间： 2024-11-26 14:10:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	293K
描述
DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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中文翻译

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技术参数
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1N5624GP/73-E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-201AD
包装说明：	PLASTIC PACKAGE-2	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

1N5624GP/73-E3 数据手册

1N5624GP thru 1N5627GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

3.0 A

200 V to 800 V

125 A

5.0 µA

V_F

0.95 V

T_jmax.

175 °C

DO-201AD

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly by

Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-201AD, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

application

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol 1N5624GP 1N5625GP 1N5626GP 1N5627GP

Unit

* Maximum repetitive peak reverse voltage

V_RRM

V_DC

200

400

600

800

* Maximum DC blocking voltage

* Maximum average forward rectified current

0.375” (9.5 mm) lead length at T_A= 70 °C

I_F(AV)

3.0

* Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

125

200

Maximum full load reverse current, full cycle average

0.375” (9.5 mm) lead length at T_A= 70 °C

I_R(AV)

µA

* Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Document Number 88524

14-Oct-05

www.vishay.com

12 3 4

中文翻译

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与1N5624GP/73-E3相关器件

型号	品牌	获取价格	描述	数据表
1N5624GP-E3/54	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5624GP-E3/66	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP-E3/71	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5624GP-E3/73	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5624GPHE3/54	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5624GP-HE3/54	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5624GPHE3/73	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5624GP-HE3/73	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
1N5624LEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2
1N5624TR	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, HERMETIC SEALED,

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