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1N5624-TR PDF预览

1N5624-TR

更新时间: 2024-11-26 13:03:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 110K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

1N5624-TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.61
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:E-LALF-W2最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM最大重复峰值反向电压:200 V
最大反向电流:1 µA最大反向恢复时间:7.5 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N5624-TR 数据手册

 浏览型号1N5624-TR的Datasheet PDF文件第2页浏览型号1N5624-TR的Datasheet PDF文件第3页浏览型号1N5624-TR的Datasheet PDF文件第4页 
1N5624, 1N5625, 1N5626, 1N5627  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Controlled avalanche characteristics  
• Low reverse current  
• High surge current loading  
949588  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: SOD-64  
APPLICATIONS  
• Rectification diode, general purpose  
Terminals: plated axial leads, solderable per  
MIL-STD-750, method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 858 mg  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
R = 200 V; IFAV = 3 A  
PACKAGE  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
1N5624  
V
1N5625  
V
V
V
R = 400 V; IFAV = 3 A  
R = 600 V; IFAV = 3 A  
R = 800 V; IFAV = 3 A  
1N5626  
1N5627  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sinewave  
PART  
SYMBOL  
VALUE  
200  
400  
600  
800  
100  
18  
UNIT  
1N5624  
1N5625  
1N5626  
1N5627  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
IFSM  
V
V
V
V
A
A
A
Reverse voltage = repetitive peak  
reverse voltage  
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
IFRM  
IFAV  
3
tp = 20 μs, half sine wave,  
Tj = 175 °C  
Pulse avalanche peak power  
PR  
1000  
W
Pulse energy in avalanche mode, non  
repetitive (inductive load switch off)  
i2*t-rating  
I
(BR)R = 1 A, Tj = 175 °C  
ER  
20  
40  
mJ  
A2*s  
°C  
i2*t  
Junction and storage temperature  
range  
Tj = Tstg  
- 55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
l = 10 mm, TL = constant  
RthJA  
25  
70  
K/W  
K/W  
Junction ambient  
On PC board with spacing 25 mm  
RthJA  
Document Number: 86063  
Rev. 1.5, 21-Sep-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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