Datasheet > 1N5624GP-HE3/73

1N5624GP-HE3/73

更新时间： 2024-11-27 10:35:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	71K
描述
DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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1N5624GP-HE3/73 数据手册

1N5624GP thru 1N5627GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

DO-201AD

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application.

PRIMARY CHARACTERISTICS

I_F(AV)

3.0 A

MECHANICAL DATA

V_RRM

I_FSM

I_R

200 V to 800 V

125 A

Case: DO-201AD, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

5.0 μA

V_F

0.95 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

175 °C

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted) ⁽¹⁾

PARAMETER

SYMBOL 1N5624GP

1N5625GP

400

1N5626GP

600

1N5627GP

800

UNIT

Maximum repetitive peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_DC

200

400

600

800

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 70 °C

I_F(AV)

I_FSM

3.0

125

200

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Maximum full load reverse current, full cycle average

0.375" (9.5 mm) lead length at T_A= 70 °C

I_R(AV)

μA

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Note

(1)

JEDEC registered values

Document Number: 88524

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与1N5624GP-HE3/73相关器件

型号	品牌	获取价格	描述	数据表
1N5624LEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2
1N5624TR	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, HERMETIC SEALED,
1N5624TR	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,
1N5624-TR	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, HALOGEN FREE AND
1N5624TRLEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,
1N5625	EIC	获取价格	GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5625	VISHAY	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER
1N5625	POWEREX	获取价格	Lead Mounted Rectifier
1N5625	DIGITRON	获取价格	Rectifier, Standard Recovery; Max Peak Repetitive Reverse Voltage: 3; Max TMS Bridge Input
1N5625	CENTRAL	获取价格	3A,400V Through-Hole Rectifier-General Purpose Single

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