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1N5624GP/72 PDF预览

1N5624GP/72

更新时间: 2024-02-27 10:28:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 293K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

1N5624GP/72 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-201AD包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.72其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:125 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:3 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5624GP/72 数据手册

 浏览型号1N5624GP/72的Datasheet PDF文件第2页浏览型号1N5624GP/72的Datasheet PDF文件第3页浏览型号1N5624GP/72的Datasheet PDF文件第4页 
1N5624GP thru 1N5627GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
200 V to 800 V  
125 A  
5.0 µA  
*
d
VF  
0.95 V  
e
t
n
e
t
Tj max.  
175 °C  
a
P
DO-201AD  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly by  
Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-201AD, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N5624GP 1N5625GP 1N5626GP 1N5627GP  
Unit  
V
* Maximum repetitive peak reverse voltage  
VRRM  
VDC  
200  
200  
400  
400  
600  
600  
800  
800  
* Maximum DC blocking voltage  
V
A
* Maximum average forward rectified current  
0.375” (9.5 mm) lead length at TA = 70 °C  
IF(AV)  
3.0  
* Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
125  
200  
A
Maximum full load reverse current, full cycle average  
0.375” (9.5 mm) lead length at TA = 70 °C  
IR(AV)  
µA  
* Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88524  
14-Oct-05  
www.vishay.com  
1

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