1N4448W

更新时间： 2024-11-23 22:37:55

品牌	Logo	应用领域
威世 - VISHAY		信号二极管
页数	文件大小	规格书
4页	143K
描述
Small Signal Diodes

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中文翻译

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1N4448W 数据手册

1N4448W

Small Signal Diodes

FEATURES

SOD-123

Silicon Epitaxial Planar Diode

Fast switching diode.

♦

.022 (0.55)

Cathode Mark

This diode is also available in other case styles including:

the DO-35 case with the type designation 1N4448, the

MiniMELF case with the type designation LL4448, and

the SOT23 case with the type designation IMBD4448.

Top View

.067 (1.70)

.055 (1.40)

MECHANICAL DATA

Case: SOD-123 Plastic Case

Weight: approx. 0.01 g

min. .010 (0.25)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

Value

Unit

Reverse Voltage

Peak Reverse Voltage

100

Rectified Current (Average)

Half Wave Rectification with Resist. Load

150¹⁾

at T

= 25 °C and f ≥ 50 Hz

amb

Surge Forward Current at t < 1 s and T = 25 °C

500

°C

FSM

Power Dissipation at T

= 25 °C

500¹⁾

amb

tot

Junction Temperature

Storage Temperature Range

175

–65 to +175

°C

¹⁾Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

4/98

12 3 4

中文翻译

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