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1N4448W PDF预览

1N4448W

更新时间: 2024-10-29 22:37:55
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 77K
描述
FAST SWITCHING SURFACE MOUNT DIODE

1N4448W 数据手册

 浏览型号1N4448W的Datasheet PDF文件第2页浏览型号1N4448W的Datasheet PDF文件第3页 
1N4448W  
FAST SWITCHING SURFACE MOUNT DIODE  
Features  
·
·
Fast Switching Speed  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
SOD-123  
Dim  
A
Min  
3.55  
2.55  
1.40  
Max  
3.85  
2.85  
1.70  
1.35  
·
·
For General Purpose Switching Applications  
High Conductance  
B
H
D
J
Mechanical Data  
C
G
·
·
Case: SOD-123, Molded Plastic  
D
a
Plastic Material: UL Flammability Rating  
Classification 94V-0  
E
0.55 Typical  
0.25  
0.11 Typical  
A
B
G
H
·
·
Moisture Sensitivity: Level 1 perJ-STD-020A  
E
C
Terminals: Solderable per MIL-STD-202,  
Method 208  
J
0.10  
a
0°  
8°  
·
·
·
·
·
Polarity: Cathode Band  
All Dimensions in mm  
Marking: Date Code and Type Code: See Page 3  
Type Code: T5  
Weight: 0.01 grams (approx.)  
Ordering Information See Page 3  
@ T = 25°C unless otherwise specified  
A
Maximum Ratings  
Characteristic  
Symbol  
1N4448W  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current  
Average Rectified Output Current  
500  
250  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
@ t = 1.0s  
4.0  
2.0  
IFSM  
A
Pd  
Power Dissipation (Note 2)  
400  
315  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
Electrical Characteristics @ T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 1)  
75  
¾
V
IR = 10mA  
IF = 5.0mA  
IF = 10mA  
IF = 100mA  
IF = 150mA  
0.62  
¾
¾
0.72  
0.855  
1.0  
VFM  
Forward Voltage (Note 1)  
V
¾
1.25  
VR = 75V  
VR = 75V, Tj = 150°C  
VR = 25V, Tj = 150°C  
VR = 20V  
2.5  
50  
30  
25  
mA  
mA  
mA  
nA  
IRM  
Peak Reverse Current (Note 1)  
¾
VR = 0, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
4.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on ourwebsite  
at http://www/diodes.com/datasheets/ap02001.pdf.  
DS12002 Rev. 9 - 2  
1 of 3  
1N4448W  

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